Synthesis of YSZ Film by Solid Single Source PE-MOCVD Method and Characterization

Abstract

Abstract: Yttria-stabilized zirconia(YSZ) film was successfully deposited onto NiO/SDC and α-Y₂O₃ substrates by solid single-source PE-MOCVD from Y(DPM)₃ and Zr(DPM)₄.The influence of various substrates on the film growth and micro-structure was studied.The delivery mechanism of the precursors and the film growth kinetics were also discussed.The Y content in the film,which was found lower than that in the precursor mixture according to the XPS analysis was determined by the temperature of the sublimation region,the content in the mixture,and the precursor feeding rate.When fixing the precursor feeding rate at 1.2 mg/min and the temperature of sublimation region at 230-280 ℃,approximately 15%Y₂O₃ content in the precursor mixture was needed to deposit YSZ film of 8%Y₂O₃.The thin film is amorphous,and can be converted into single cubic phase after sintering at 1 100 ℃ for 3 h.The grain size is about 100 nm and the film growth rate is about 7 nm/min.

Key words: Chemical vapor deposition, Microwave plasma, Solid electrolyte, Film, Yttria-stabilized zirconia(YSZ)

CLC Number:

TB332

TrendMD:

LIU Ming-Fei, JIANG Yin-Zhu, GAO Jian-Feng, WANG Yan-Yan, MENG Guang-Yao. Synthesis of YSZ Film by Solid Single Source PE-MOCVD Method and Characterization[J]. Chem. J. Chinese Universities, 2005, 26(11): 1981.

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Synthesis of YSZ Film by Solid Single Source PE-MOCVD Method and Characterization

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