Chem. J. Chinese Universities ›› 2021, Vol. 42 ›› Issue (8): 2509.doi: 10.7503/cjcu20210162

• Physical Chemistry • Previous Articles     Next Articles

Preparation and Photoelectrochemical Performance of Bi1-xFexVO4 Thin Film Photoanodes

TANG Ding(), ZHONG Shuiping   

  1. College of Zijin Mining,Fuzhou University,Fuzhou 350108,China
  • Received:2021-03-10 Online:2021-08-10 Published:2021-08-05
  • Contact: TANG Ding E-mail:tang_ding@163.com
  • Supported by:
    the National Natural Science Foundation of China(21802113)

Abstract:

Herein, Bi1-xFexVO4x=0, 0.05, 0.10, 0.25, 0.40) thin films were prepared on fluorine-doped tin dioxide(FTO) conductive glasses by one-step drop-coating approach, and their structural, morphological, optical and photoelectrochemical(PEC) properties were characterized. It is found that Bi1-xFexVO4 thin films with Fe addition show the better PEC performance compared with BiVO4 thin film. At the potential of 1.23 V(vs. RHE), a highest photocurrent density of 0.50 mA/cm2 for water oxidation is obtained for 25% Fe-BiVO4(the actual Fe content is 22.5%) thin film in 0.1 mol/L potassium phosphate buffer solution(pH=7.0), which is three times higher than that of BiVO4 thin film. Combined with X-ray diffraction(XRD), Raman spectroscopy and X-ray photoelectron spectroscopy(XPS) analyses, it is confirmed that Fe3+ presents in form of FeVO4 in the Bi1-xFexVO4 thin films, thus actually a BiVO4/FeVO4 composite film is prepared. The UV-Vis measurements reveal that all the Bi1-xFexVO4 thin films exhibit an optical band gap of 2.4—2.5 eV. After eliminating the effort of iron-based OER catalysts, the improved PEC activity of 25% Fe-BiVO4 thin film could be attributed to the increment of charge transfer efficiency(ηtrans) and separation efficiency(ηsep), which is also verified by electrochemical impedance spectroscopy(EIS) tests. The flat band potentials of BiVO4 and FeVO4 thin films are determined to be 0.10 V and 0.42 V(vs. RHE) from Mott-Schottky measurements. Based on the measured optical band gap and flat band potential, a schematic diagram of band structure is plotted, and the result displays that a type Ⅱ band alignment is formed between BiVO4 and FeVO4, which could promote the separation and transfer of photogenerated electron-hole pairs. Therefore, the mechanism for the improved PEC performance of 25% Fe-BiVO4 thin film could be explained by favorable separation and transfer of carriers resulted from the type Ⅱ band alignment.

Key words: Photoelectrochemical water splitting, Bismuth vanadate, Carrier surface recombination, Type II heterojunction, Composite film

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