A Study of the Interface Action Between Gd2CuO4 Layer and Si, SiO2/Si Substrate

Abstract

Abstract: Gd₂CuO₄ film was deposited on Si and SiO₂/Si wafer by using amorphous heteronuclear complex as a precursor. XRDindicated that Gd₂CuO₄ film with a perovskite structure could be formed on single crystal Si substrate at 600 ℃ foR₁ h and on SiO₂/Si substrate at 700 ℃ foR₁ h. The crystalline size of the Gd₂CuO₄ film on Si wafer increased from 17 to 21 nm with the calcination temperature increasing from 600 to 800 ℃ foR₁ h. The calcination time had less effect on the crystalline size. The crystallization temperature of Gd₂CuO₄/SiO₂/Si was higher than that of Gd₂CuO₄/Si sample due to the interface diffusion. The interface diffusion between Gd₂CuO₄ film and Si substrate had taken place and the interface species were Gd₂O₃, CuO, SiOand Si. The interface diffusion between Gd₂CuO₄ film and SiO₂/Si substrate was much serious than that of Gd₂CuO₄/Si sample. Gd and Cu diffused into SiO₂ layer and existed in Gd₂O₃ and CuOsimple oxides.

Key words: Gd₂CuO₄ film, Crystallization, Interface, Diffusion, AES

CLC Number:

O643

TrendMD:

ZHANG Ying-Xia, ZHU Yong-Fa, YAO Wen-Qing, CAO Li-Li . A Study of the Interface Action Between Gd₂CuO₄ Layer and Si, SiO₂/Si Substrate[J]. Chem. J. Chinese Universities, 2001, 22(10): 1703.

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A Study of the Interface Action Between Gd₂CuO₄ Layer and Si, SiO₂/Si Substrate

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