高等学校化学学报

高等学校化学学报

• 研究论文 • 上一篇    下一篇

碳辅助CVD制备氧化硅纳米线及其光学性能

郑立仁1,2, 黄柏标2, 尉吉勇2,3   

    1. 泰山学院物理与电子科学系, 泰安 271021;
    2. 山东大学晶体材料研究所, 晶体材料国家重点实验室,
    3. 山东大学化学与化工学院, 济南 250100
  • 收稿日期:2008-04-08 修回日期:1900-01-01 出版日期:2009-02-10 发布日期:2009-02-10
  • 通讯作者: 黄柏标

Carbon Assisted CVD Synthesis of SiOx Nanowires and Their Optical Property

ZHENG Li-Ren1,2, HUANG Bai-Biao2*, WEI Ji-Yong2,3   

    1. College of Physics and Electronic Engineering, Taishan University, Tai’an 271021, China;
    2. State Key Laboratory of Crystal Materials, Institute of Crystal Materials;
    3. School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100, China
  • Received:2008-04-08 Revised:1900-01-01 Online:2009-02-10 Published:2009-02-10
  • Contact: HUANG Bai-Biao

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被引次数

3

摘要： 利用碳辅助CVD方法, 在1100~1140 ℃、常压、N2/H2气氛下, 以Fe-Al-O复合体系为催化剂, 在石英衬底上制备了大量非晶氧化硅纳米线. 该纳米线直径为20~200 nm, 长数百微米. 利用透射电镜、扫描电镜及电子能谱对氧化硅纳米线的形貌及组分进行了表征与分析; FTIR光谱显示了非晶氧化硅的3个特征峰(482, 806和1095 cm-1)和1132 cm-1无序氧化硅结构的强吸收峰. 氧化硅纳米线的光致发光光谱(PL)表明其具有较强的438 nm荧光峰.

关键词: SiOx(x≤2)纳米线, 碳辅助CVD方法, FTIR光谱, 光致发光

Abstract: High-density, large-scale SiOx(x≤2) nanowires were successfully fabricated using carbon-assisted CVD method with Fe-Al-O catalyst at 1100—1140 ℃, under a flowing N2/H2 atmosphere. The SiOx nanowires are uniform with a diameter of 30—200 nm and a length of up to a few handrand micrometers. SEM, TEM, EDS, FTIR and PL were preformed to characterize the microstructure, composition and optics performances of the nanowires. The nanowires show IR absorption peaks at 482, 806, 1095 and 1132 cm-1. The PL peak of the nanowires is at 438 nm.

Key words: SiOx(x≤2) nanowire, Carbon-assisted CVD method, FTIR spectrum, PL spectrum

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