高等学校化学学报 ›› 2004, Vol. 25 ›› Issue (11): 2078.

• 研究论文 • 上一篇    下一篇

ZnO薄膜的XPS价带谱研究

李万程, 杜国同, 杨小天, 刘博阳, 张源涛, 赵佰军, 姜秀英   

  1. 吉林大学电子科学与工程学院, 集成光电子国家重点实验室, 长春130023
  • 收稿日期:2003-12-25 出版日期:2004-11-24 发布日期:2004-11-24
  • 基金资助:

    国家自然科学基金(批准号:60176026,60177007)资助

XPS Valence Band of ZnO Films

LI Wan-Cheng, DU Guo-Tong, YANG Xiao-Tian, LIU Bo-Yang, ZHANG Yuan-Tao, ZHAO Bai-Jun, JIANG Xiu-Ying   

  1. State Key Laboratory on Integrated Optoelectronics, College of Electronics Science and Engineering, Jilin University, Changchun 130023, China
  • Received:2003-12-25 Online:2004-11-24 Published:2004-11-24

摘要: 用MOCVD方法在Al2O3衬底c面生长ZnO薄膜,用XPS对薄膜进行了测量.结果显示,与O1s和Zn2p态相比,Zn3d态有更大的化学位移,可用于更有效地分析ZnO薄膜变化;随着Zn3d+Zn4s态和Zn3d态电子与O2p态电子耦合的增强,Zn3d态电子的结合能变大;二乙基锌(DEZn)源温是影响ZnO成键的重要因素.

关键词: ZnO薄膜, XPS, 价带谱

Abstract: ZnO films are grown by the plasma-assisted metal organic chemical vapor deposition(MOCVD) on c-sapphire and are measured by XPS. The results show that comparing with O1s and Zn2p, Zn3d has more obvious chemical displacement which can help us study the characteristics of ZnO film more effectively. The binding energy of Zn3d electron becomes larger along with the strengthening of coupling between Zn3d or Zn3d+Zn4s and O2p. The temperature of DEZn is an important factor which affects the formation of covalent bond between Zn and O atoms.

Key words: ZnO films, XPS, Valence band spectrum

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