高等学校化学学报

高等学校化学学报 ›› 1997, Vol. 18 ›› Issue (4): 499.

• 论文 •    下一篇

TiO2陶瓷顶层膜的化学气相淀积生长研究

彭定坤, 杨萍华, 刘子涛, 孟广耀   

  1. 中国科学技术大学材料科学与工程系, 合肥, 230026
  • 收稿日期:1996-04-15 出版日期:1997-05-24 发布日期:1997-05-24
  • 通讯作者: 彭定坤, 女, 59岁, 教授.
  • 作者简介:彭定坤, 女, 59岁, 教授.
  • 基金资助:

    国家自然科学基金

A Study of Top Layer of TiO2 Membrane Prepared by Chemical Vapor Deposition Method

PENG Ding-Kun, YANG Ping-Hua, LIU Zi-Tao, MENG Guang-Yao   

  1. Department of Materials Science & Engineering, University of Science and Technology of China, Hefei, 230026
  • Received:1996-04-15 Online:1997-05-24 Published:1997-05-24

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摘要： 以TiCl4和Ti(OC4H9)4为源物质,采用热化学气相淀积(CVD)法及射频PCVD法在多孔α－Al2O3陶瓷衬底上淀积生长TiO2薄膜,观测TiO2膜的生长方式、生长速率以及结构和表面形貌等,讨论其生长机制,评价CVD改性生长的顶层TiO2陶瓷膜的气体渗透性.

关键词: 氧化钛, 陶瓷膜, 化学气相淀积, 渗透率

Abstract: This paper reports the growth of TiO2 thin films deposited on porous α-Al2O3ce-ramic substrates by thermal chemical vapor deposition(CVD) and plasma enhanced CVDpro-cesses using TiCl4 or Ti (OC4H9)4 as the source material.The growth manner and rate of TiO2 films as well as the structure and the surface morphology of the films are observed byXRDand SEM.And their growth mechanism is discussed.We also evaluated the gas perme-ability of the ceramic membranes modified with TiO2, top layer by CVDrnethods.

Key words: Titanium oxide, Ceramic membrane, Chemical vapor deposition, Permeability

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