高等学校化学学报

高等学校化学学报 ›› 1995, Vol. 16 ›› Issue (S1): 172.

• 研究论文 • 上一篇    下一篇

Photoelectrochemical Behaviour of Hydrogenated Amorphous Silicon(a-Si:H) Films

WANG Bao-hui1,2, WANG De-jun2, ZHANG Li-hua1, GENG Xin-hua3, SUN Zhong-lin3, GENG Xin-hua3, SUN Zhong-lin3, LI Tie-jin2   

  1. 1. Science & Technology Research Institute of Safety Protection, Daqing Petroleum Institute, Anda, 151400, P. R. China;
    2. Department of Chemistry, Jilin University, Changchun, 130023, P. R. China;
    3. Inistitute of Potoelectron, Nankai University, Tanjin, 300071, P. R. China
  • 收稿日期:1995-06-20 出版日期:1995-12-31 发布日期:1995-12-31
  • 基金资助:

    National Natural Science Foundation of China

Photoelectrochemical Behaviour of Hydrogenated Amorphous Silicon(a-Si:H) Films

WANG Bao-hui1,2, WANG De-jun2, ZHANG Li-hua1, GENG Xin-hua3, SUN Zhong-lin3, GENG Xin-hua3, SUN Zhong-lin3, LI Tie-jin2   

  1. 1. Science & Technology Research Institute of Safety Protection, Daqing Petroleum Institute, Anda, 151400, P. R. China;
    2. Department of Chemistry, Jilin University, Changchun, 130023, P. R. China;
    3. Inistitute of Potoelectron, Nankai University, Tanjin, 300071, P. R. China
  • Received:1995-06-20 Online:1995-12-31 Published:1995-12-31
  • Supported by:

    National Natural Science Foundation of China

PDF (PC)

摘要：

Photoelectrochemical techniques have been employed in the investigation of p-type, n-type and intrinsic hydrogenated amorphous silicon(a-Si:H) films. The results show that the photocurrent response of the films strongly depends on the doped type electrolyte solution and the redox potential of the redox couples. Intrinsic a-Si:H film yields a stable photocurrent much higher than the p- and n-type ones. Based on the measurements, the energy levels and flatband potential of the intrinsic a-Si:H film are given, and the mechanisms of charge transfer in photoelectrochemical cell (PEC) are discussed.

关键词: Hydrogenated amorphous silicon, Photoelectrochemistry, Photocurrent

Abstract:

Photoelectrochemical techniques have been employed in the investigation of p-type, n-type and intrinsic hydrogenated amorphous silicon(a-Si:H) films. The results show that the photocurrent response of the films strongly depends on the doped type electrolyte solution and the redox potential of the redox couples. Intrinsic a-Si:H film yields a stable photocurrent much higher than the p- and n-type ones. Based on the measurements, the energy levels and flatband potential of the intrinsic a-Si:H film are given, and the mechanisms of charge transfer in photoelectrochemical cell (PEC) are discussed.

Key words: Hydrogenated amorphous silicon, Photoelectrochemistry, Photocurrent

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