高等学校化学学报 ›› 2023, Vol. 44 ›› Issue (8): 20220767.doi: 10.7503/cjcu20220767

• 研究论文: 无机化学 • 上一篇    下一篇

杂质硅对锌酸钠溶液结晶过程的影响机理研究

刘鹏飞1,3, 游韶玮2(), 张亦飞3, 汤建伟1, 王保明1, 刘咏4, 化全县4   

  1. 1.郑州大学生态与环境学院, 郑州 450001
    2.中节能工程技术研究院有限公司, 北京 100082
    3.中国科学院过程工程研究所, 北京 100190
    4.郑州大学化工学院, 郑州 450001
  • 收稿日期:2022-12-19 出版日期:2023-08-10 发布日期:2023-03-30
  • 通讯作者: 游韶玮 E-mail:yiushaowei09@mails.ucas.ac.cn
  • 基金资助:
    国家重点研发计划项目(2021YFD17009);国家自然科学基金(21908230)

Influence Mechanism of Impurity Silicon on Crystallization Process of Sodium Zincate Solution

LIU Pengfei1,3, YOU Shaowei2(), ZHANG Yifei3, TANG Jianwei1, WANG Baoming1, LIU Yong4, HUA Quanxian4   

  1. 1.School of Ecology and Environment,Zhengzhou University,Zhengzhou 450001,China
    2.CECEP Engineering Technology Research Institute Co. ,Ltd. ,Beijing 100082,China
    3.Institute of Process Engineering,Chinese Academy of Sciences,Beijing 100190,China
    4.School of Chemical Engineering,Zhengzhou University,Zhengzhou 450001,China
  • Received:2022-12-19 Online:2023-08-10 Published:2023-03-30
  • Contact: YOU Shaowei E-mail:yiushaowei09@mails.ucas.ac.cn
  • Supported by:
    the National Key Research & Development Program of China(2021YFD17009);the National Natural Science Foundation of China(21908230)

摘要:

研究了杂质硅对锌酸钠溶液结晶过程的影响规律, 通过结晶物相和热力学研究了杂质硅对锌酸钠溶液结构的影响. 通过分析锌酸钠溶液的分解行为, 考察了杂质硅浓度、 晶种和温度等参数对锌酸钠溶液结晶 过程的影响规律. 结果表明, 存在一个临界硅浓度, 当硅浓度高于临界硅浓度时, 杂质硅抑制结晶过程的进行; 当硅浓度低于临界硅浓度时, 杂质硅促进结晶过程的进行. 以氧化锌作为晶种时, 35, 50和60 ℃时临界硅浓度分别为0.20~0.40, 0.054~0.20和0~0.054 g/L. 以氢氧化锌作为晶种时, 35 ℃时临界硅浓度为0.20~0.40 g/L. 临界硅浓度随温度的升高而降低. 硅浓度低时, 物相为多面体形的ε-Zn(OH)2; 硅浓度高时, 物相为纳米棒和长方体形的γ-Zn(OH)2, 提高温度可以抑制γ-Zn(OH)2的生成. 硅杂质的存在可能促使锌酸钠溶液的结构发生了重构, 使锌酸钠溶液中锌元素以Zn(OH)+的形式存在, 升高温度则可减弱杂质硅的影响.

关键词: 杂质硅, 锌酸钠溶液, 结晶, 氧化锌, 氢氧化锌

Abstract:

Effect of impurity silicon on the crystallization process of sodium zincate solution was studied. Based on the crystal phase and thermodynamics analysis, the influence mechanism of impurity silicon on the structure of sodium zincate solution was obtained. The decomposition behavior of sodium zincate solution was analyzed. The effects of impurity silicon concentration, crystal seed and temperature on the crystallization process of sodium zincate solution were investigated. The results show that there is a critical silicon concentration. When the silicon concentration is higher than the critical silicon concentration, the impurity silicon inhibits the crystallization process; when the silicon concentration is lower than the critical one, the impurity silicon promotes the crystallization process. When zinc oxide is used as crystal seed, the critical silicon concentration at 35, 50, and 60 ℃ are in the range of 0.20—0.40, 0.054—0.20 and 0—0.054 g/L, respectively; when zinc hydroxide is used as crystal seed, the critical silicon concentration is in the range of 0.20—0.40 g/L at 35 ℃. The critical silicon concentration decreases with increasing temperature. When silicon content is low, the phase is ε-Zn(OH)2 of polyhedron; when silicon content is high, the phase is γ-Zn(OH)2 of nanorods and cuboids. Increasing the temperature can inhibit the formation of γ-Zn(OH)2. The presence of silicon impurities may reorganize the structure of sodium zincate solution, and is conducive to the existence of zinc ions in the form of Zn(OH)+. The increase of temperature can reduce the influence of silicon impurities.

Key words: Impurity silica, Sodium zincate solution, Crystallization, ZnO, Zn(OH)2

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