Effects of Additive on the Electrodeposition and Coating Structure in a Novel System of Electronic Copper Electroplating

doi:10.7503/cjcu20210225

Abstract

Abstract:

Electronic copper electroplating has important applications in the advanced electronic manufactu-ring industry. In this work， the effects of the additive XNS（a mixture of polyamine and nitrogen-containing compounds） on the coating structure in the novel， weakly alkaline and citrate-based multi-coordination system for copper electronic electroplating with low concentration of main salts（10 g/L copper sulfate） was investiga-ted. The constant current deposition experiments indicate that the additive XNS can increase the current efficiency of copper electrodeposition， which achieves 95.4% at a current density of 2.0 A/dm² and increases by 17.5% comparing to the electroplating system without XNS. Electrochemical experiments prove that the additive XNS can change the cathodic reduction of Cu（Ⅱ） cations， i.e.， in presence of XNS which is a one-step two-electron process［Cu（Ⅱ）+2e→Cu］， and in absence of XNS which is a two-step one-electron processes ［Cu（Ⅱ）+e→Cu（Ⅰ）+e→Cu］， and improves the reduction current density of Cu electrodeposition. Although additive XNS can accelerate copper electrodeposition rate， the coating surface of Cu becomes much finer and neater. At the current density of 2.0 A/dm²， the crystal structure of copper coating is reconstructed from Cu（111） facet to Cu（200） facet， presenting highly preferred crystal orientation in the presence of XNS.

Key words: Electronic copper electroplating, Additive, Multi coordination, Weakly alkaline and low concentration process, Highly preferred crystal orientation

CLC Number:

O646

TrendMD:

LI Weiqing, JIN Lei, YANG Jiaqiang, Wang Zhaoyun, YANG Fangzu, ZHAN Dongping, TIAN Zhongqun. Effects of Additive on the Electrodeposition and Coating Structure in a Novel System of Electronic Copper Electroplating[J]. Chem. J. Chinese Universities, 2021, 42(9): 2919.

Figures/Tables 7

References 32

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Bath system	d₁₁₁/nm	a₁₁₁/nm	D₁₁₁/nm	TC（%）	Δσ/（kg·mm^-2）
BPB	0.20813	0.3605	36.7	59.3	1.767
BPB+XNS	0.20823	0.3606	28.5	7.9	1.767

Bath system	d₁₁₁/nm	a₁₁₁/nm	D₁₁₁/nm	TC（%）	Δσ/（kg·mm^-2）
BPB	0.20813	0.3605	36.7	59.3	1.767
BPB+XNS	0.20823	0.3606	28.5	7.9	1.767

Bath system	d₂₀₀/nm	a₂₀₀/nm	D₂₀₀/nm	TC（%）	Δσ/（kg·mm^-2）
BPB	0.18057	0.3611	29.1	13.9	2.544
BPB+XNS	0.18084	0.3617	21.1	89.9	2.544

Bath system	d₂₀₀/nm	a₂₀₀/nm	D₂₀₀/nm	TC（%）	Δσ/（kg·mm^-2）
BPB	0.18057	0.3611	29.1	13.9	2.544
BPB+XNS	0.18084	0.3617	21.1	89.9	2.544

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