Chem. J. Chinese Universities ›› 2025, Vol. 46 ›› Issue (4): 20240488.doi: 10.7503/cjcu20240488

• Physical Chemistry • Previous Articles     Next Articles

Insitu Construction of N-defective g-C3N5/CdS/Ti3C2 Schottky Junction for High-efficiency Photocatalytic NO Removal

KANG Sha, ZHANG Ke(), WEI Yajing, WANG Chuanyi()   

  1. School of Environmental Science and Engineering,Shaanxi University of Science and Technology,Xi’an 710021,China
  • Received:2024-10-29 Online:2025-04-10 Published:2025-01-03
  • Contact: ZHANG Ke, WANG Chuanyi E-mail:kezhang@sust.edu.cn;wangchuanyi@sust.edu.cn
  • Supported by:
    the National Natural Science Foundation of China(52161145409);the Scientific Research Program of Education Department of Shaanxi Provincial Government, China(23JP011)

Abstract:

The synergy of two widely developed modulation techniques, defect engineering and heterostructure construction, was integrated to substantially improve photocatalytic performance and a series of N-defective g-C3N5/CdS/Ti3C2 photocatalysts were successfully constructed. Through the rational combination of vacancy engineering and multi-component charge transfer mode, the photocatalytic performance of the designed optimal g-C3N x /CdS/Ti3C2 photocatalyst reached equilibrium at 60.21% within 10 min of visible light irradiation in a flow reactor, which was 2.7 and 2.4 times that of pure g-C3N x and CdS, respectively. Furthmore, the NO2 production rate of g-C3N x /CdS/Ti3C2 is several times lower than other catalysts. Additionally, the charge carrier transfer pathway was deduced by analyzing the active species via electron paramagnetic resonance(EPR) and trapping experiment. The in-situ diffuse reflectance Fourier transform infrared spectroscopy(in-situ DRIFTS) experiment further revealed the mechanism of photocatalytic removal of NO in the g-C3N x /CdS/Ti3C2 system. This research provides a new standpoint for the reasonable design of vacancy engineering and heterogeneous structures for effective NO removal.

Key words: Photocatalysis, NO, g-C3N x, Ti3C2, CdS

CLC Number: 

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