Preparing Process of SrBi2Ta2O9 Ferroelectric Thin Films by Sol-gel Method Using Soluble Inorganic Salts Source

Abstract

Abstract: Strontium bismuth tantalate(SBT) and ferroelectric thin films were prepared by a novel sol-gel method on Al₂O₃ and Pt/Ti//SiO₂/Si substrates by using strontium nitrate, bismuth nitrate and fluorine tantalum acid as the sol precursors, and citric acid-ethylene glycol-ethylenediaminetetraacetic acid(EDTA) as the chelating agents. The structure characterization of the sol and as-grown SBT thin films by FTIR, XRD and SEM revealed that the factors such as kind and content of chelating agents and pH value played a key role in the preparing process. The results show that the polycrystalline films with a single orthorhombic-phase are density, homogeneity and crack-free, and average grain size of 150 nm at 750℃ for 40 min in oxygen atmosphere. The ferroelectrics properties of thin films are obtained that remnant polarization(2P_r) and coercive field(2E_c) are 9.6 μC/cm² and 76 kV/cm, respectively.

Key words: SrBi₂Ta₂O₉, Sol-gel, Ferroelectricity, Thin film

CLC Number:

O₄84

TrendMD:

JI Hui-Ming, GU Yan-Fei, XU Ting-Xian . Preparing Process of SrBi₂Ta₂O₉ Ferroelectric Thin Films by Sol-gel Method Using Soluble Inorganic Salts Source[J]. Chem. J. Chinese Universities, 2004, 25(9): 1613.

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Preparing Process of SrBi₂Ta₂O₉ Ferroelectric Thin Films by Sol-gel Method Using Soluble Inorganic Salts Source

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