Effect of Heterogeneous Inducing Bilayer on the Properties of Rubrene Thin Film Transistors†

doi:10.7503/cjcu20180092

Abstract

Abstract:

Inducing growth method was used to improve the crystallinity of rubrene thin films. Heterogeneous inducing bilayers were formed with vacuum deposition p-sexiphenyl(p-6P) and copper phthalocyanine(CuPc) on silicon dioxide substrates. The influence of various substrate temperatures on the morphology of rubrene films was investigated. And the growth process of rubrene molecules on heterogeneous inducing bilayer was analyzed. The results showed that the crystalline rubrene films were formed by the partly ordered films of the second CuPc inducing layer. The ordered areas of CuPc films increased with the substrate temperature. The rod-like crystals of rubrene films also gradually became larger. When the substrate temperatures of CuPc and rubrene were both 90 ℃ and the rubrene thickness was 20 nm, the rubrene films formed highly ordered and interconnected rob-like grains with desirable molecular orientation. The rubrene films on heterogeneous bilayers were polycrystalline structure by X-ray diffraction and transmission electron microscope analyses. And the performance of organic thin film transistor devices with the heterogeneous bilayer was obviously improved. The open-state current was improved by about 3 orders of magnitude, the mobility was raised by 30 times, and the threshold voltage was reduced by 20 V.

Key words: Double heterogeneous induction, Rubrene, p-Sexiphenyl(p-6P), Copper phthalocyanine, Origanic thin film transistor

TrendMD:

SUN Yang, YAN Chuang, XIE Qiang, SHI Chao, ZHANG Liang, WANG Lijuan, SUN Lijing. Effect of Heterogeneous Inducing Bilayer on the Properties of Rubrene Thin Film Transistors^†[J]. Chem. J. Chinese Universities, 2018, 39(6): 1221.

Figures/Tables 8

Fig.1 Diagram of rubrene thin film transisitors and molecular structures of corresponding materials

Fig.2 AFM images of SiO2/RUB(A), SiO2/p-6P/RUB(B) and SiO2/p-6P/CuPc/RUB(C)

Fig.3 AFM images at different substrate temperatures(2 μm×2 μm)(A)—(C) 3 nm p-6P/3 nm CuPc; (D)—(F) 3 nm p-6P/3 nm CuPc/20 nm RUB; (A), (D) 70 ℃; (B), (E) 90 ℃; (C), (F) 120 ℃.

Fig.4 AFM images of rubrene thin films with various thickness grown on 3 nm p-6P/3 nm CuPc films(5 μm×5 μm) Thickness of (A)—(F) are 1, 3, 5, 10, 12 and 20 nm, respectively.

Fig.5 XRD profiles of rubrene thin films deposited on different inducing layersa. SiO2/RUB; b. SiO2/CuPc/RUB; c. SiO2/p-6P/RUB; d. SiO2/p-6P/CuPc; e. SiO2/p-6P/CuPc/RUB.

Fig.6 SAED pattern(A) and corresponding TEM image(B) of rubrene thin films deposited on p-6P/CuPc heterogenous inducing bilayer

Fig.7 Output and transfer characteristics of rubrene thin film transistors(A), (B) 3 nm p-6P/20 nm RUB; (C), (D) 3 nm p-6P/3 nm CuPc/20 nm RUB.

Table 1 Parameters of rubrene thin film transistors based on p-6P inducing layer and p-6P/CuPc heterogenous inducing bilayer

Organic thin film transistor	I_on/μA	V_on/V	I_on/I_off	μ/(cm²·V^-1·s^-1)	V_TH/V
p-6P/RUB	0.01	-30	10²	3.96×10^-4	-36
p-6P/CuPc/RUB	1.45	-8	10⁵	1.18×10^-2	-17

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