Preparation of LaFeO3 Nanocrystalline Thin Film and Application in the MOSFET Gas Sensor

Abstract

Abstract: The precursors of LaFeO₃ were prepared by sol-gel method and nanocrystalline film of the LaFeO₃ were obtained by a solid phase reaction at about 550℃ for 1 hour.The thicknesses of the nanocrystalline films are uniformly distributed, and their crystal sizes are 40-50 nm.Combining this thin film technology with planar technique of integrated circuit, we have developed NCF-OSFETgas sensor for the first time.This device not only has good sensitivity to ethanol, but also has excellent selectivity.

Key words: Lanthanum ferrite, Sol-gel method, Nanocrystalline thin film, MOS field effect transistor, Gas sensor

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ZHAO Shan-Qi, ZHAO Chun, CAI Hong, XU Bao-Kun, PENG Zuo-Yan, ZHAO Mu-Yu . Preparation of LaFeO₃ Nanocrystalline Thin Film and Application in the MOSFET Gas Sensor[J]. Chem. J. Chinese Universities, 1993, 14(10): 1437.

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Preparation of LaFeO₃ Nanocrystalline Thin Film and Application in the MOSFET Gas Sensor

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