Preparation of Reduced-graphene-oxide/Au Composite Microelectrode Array and Its Optical and Electrical Characteristics†

doi:10.7503/cjcu20160352

Abstract

Abstract:

The reduced-graphene-oxide/Au(R-GO/Au) composite microelectrode array was fabricated by a simple method. The graphene oxide(GO) array was prepared by two beam interference-holographic lithography technique, and then reduced by hydrazine vapor to partially remove the oxygen-containing groups. Ultrathin Au film was deposited on the reduced-graphene-oxide(R-GO) array to improve its conductivity. The results indicate that R-GO/Au composite microelectrode array exhibits excellent surface morphology with precisely controlled period and high resolution, good transparency in visible light region and high conductivity. The organic photovoltaic device based on the R-GO/Au composite microelectrode array exhibits a high power conversion efficiency of 3.43%.

Key words: Reduced-graphene-oxide/Au composite electrode, Microelectrode array, Two beam interference-holographic lithography technique, Hydrazine vapor reduction

CLC Number:

O646

TrendMD:

JI Jinhai, WEN Xuemei, CHEN Yang, BI Yangang. Preparation of Reduced-graphene-oxide/Au Composite Microelectrode Array and Its Optical and Electrical Characteristics^†[J]. Chem. J. Chinese Universities, 2016, 37(10): 1826.

Figures/Tables 5

Fig.1 Schematic diagram of the process steps for fabrication of the R-GO/Au composite microelectrode array(A), AFM images of the surface of R-GO/Au composite microelectrode array(B, C), height profile of R-GO/Au composite microelectrode array(D) and SEM images of R-GO/Au composite microelectrode array(E)

Fig.2 C1s XPS spectra of GO(A) and R-GO(B)

Fig.3 Transmittance spectra of the GO and R-GO films(A), Au films(B) with different thickness, R-GO/Au films with different thickness of Au and R-GO(C—E) and transmittance of Au and R-GO/Au films at 550 nm(F)(A) a. GO(10 nm); b. GO(15 nm); c. GO(20 nm); d. R-GO(10 nm); e. R-GO(15 nm); f. R-GO(20 nm). (B)—(E) Au(x nm): a. x=1; b. x=2; c. x=3; d. x=4; e. x=5; f. x=6; g. x=7; h. x=8. (F) a. Au; b. R-GO(10 nm)/Au; c. R-GO(15 nm)/Au; d. R-GO(20 nm)/Au.

Fig.4 Sheet resistance of Au and R-GO/Au films with different thickness of Au(A) and relationship between sheet resistance and transmittance at 550 nm of the R-GO/Au films(B)

Fig.5 Schematic structure(A) and j-v curve(B) of OPVs based on the R-GO/Au microelectrode array anode

References 42

[1]	Rahim R., Ochoa M., Parupud T., Zhao X., Yazdi I. K., Dokmeci M. R., Tamayol A., Khademhosseini A., Ziaie B., Sens. Actuators B, 2016, 229(28), 609—617
[2]	Deganello D., Cherry J. A., Gethin D. T., Claypole T. C., Thin Solid Films, 2010, 518(21), 6113—6116
[3]	Lu C., Chen Q., Zhou T., Bozic D., Fu Z., Pan J. Q., Feng G., Mol. Psychiatr., 2016, 21,159—168
[4]	Kamaraju N., Rubano A., Jian L. K., Saha S., Venkatesan T., Nötzold J., Campen R. K., Wolf M., Kampfrath T., Light Sci. Appl., 2014, 3,e155
[5]	Ding R., Feng J., Zhou W., Zhang X. L., Fang H. H., Yang T., Wang H. Y., Hotta S., Sun H. B., Sci. Rep., 2015, 5,12445
[6]	Huang Y. Z., Fang Y. R., Zhang Z. L., Zhu L., Sun M. T., Light Sci. Appl., 2014, 3,e199
[7]	Liu Y. F., Feng J., Cui H. F., Zhang Y. F., Yin D., Bi Y. G., Song J. F., Chen Q. D., Sun H. B., Nanoscale, 2013, 5(22), 10811—10815
[8]	Li Z. H., Cho E. S., Kwon S. J., Appl. Surf. Sci., 2010, 257(3), 776—780
[9]	Namsun C., Youngseok K., Sohee K., ACS Appl. Mater. Interfaces, 2016, 8(9), 6269—6276
[10]	Liu Y. F., Feng J., Zhang Y. F., Zhang Y. F., Yin D., Bi Y. G., Song J. F., Chen Q. D., Sun H. B., Org. Electron., 2014, 15(2), 478—483
[11]	Sun Y. L., Dong W. F., Niu L. G., Jiang T., Liu D. X., Zhang L., Wang Y. S., Chen Q. D., Kim D. P., Sun H. B., Light Sci. Appl., 2014, 3,e129
[12]	Xiao X. Z., Lv C., Wang G., Xu Y., Wang J. P., Yang H., Chem. Res. Chinese Universities, 2015, 31(3), 434—438
[13]	Sun Y. L., Dong W. F., Yang R. Z., Meng X., Zhang L., Chen Q. D., Sun H. B., Angew. Chem. Int. Ed., 2012, 124(7), 1590—1594
[14]	Yin D., Feng J., Ma R., Liu Y. F., Zhang Y. L., Zhang X. L., Bi Y. G., Chen Q. D., Sun H. B., Nat. Commun., 2016, 7,11573
[15]	Fang H. H., Ding R., Lu S. Y., Yang Y. D., Chen Q. D., Feng J., Huang Y. Z., Sun H. B., Laser Photon. Rev., 2013, 7(2), 281—288
[16]	Liu Y. S., Feng J., Ou X. L., Cui H. F., Xu M., Sun H. B., Org. Electron., 2016, 31,247—252
[17]	Wang P., Qiao L. L., Lin J. T., He F., Liao Y., Chen Y., Chin. Sci. Bull., 2016, 61(6), 567—575
	(王鹏, 乔玲玲, 林锦添, 何飞, 廖洋, 程亚.科学通报, 2016,61(6), 567—575)
[18]	Jin Y., Feng F., Xu M., Zhang X. L., Wang L., Chen Q. D., Wang H. Y., Sun H. B., Adv. Opt. Mater., 2013, 1(11), 809—813
[19]	Bai Y., Feng J., Liu Y. F., Song J. F., Simonen J., Jin Y., Chen Q. D., Zi J., Sun H. B., Org. Electron., 2011, 12(11), 1927—1935
[20]	Xu M., Feng J., Liu Y. S., Jin Y., Wang H. Y., Sun H. B., Appl. Phys. Lett., 2014, 105(15), 153303
[21]	Wu F. H., Xu F., Chen L., Jiang B. B., Sun W. B., Wei X. W., Chem. Res. Chinese Universities, 2016, 32(3), 468—473
[22]	Zhu L. X., Liu F. Y., Lin H. G., Hu J. J., Yu Z. F., Wang X. R., Fan S. H., Light Sci. Appl., 2016, 5(3), e16052
[23]	Huang X., Zeng Z., Fan Z., Liu J., Zhang H., Adv. Mater., 2012, 24(45), 5979—6004
[24]	Liu J. H., Yi Y. H., Zhou Y. H., Li X., Dong K., Huang J., Xu Z., Nanoscale Res. Lett., 2016, 11(1), 1—7
[25]	Wang L., Lin X. W., Hu W., Shao G. H., Chen P., Liang L. J., Jin B. B., Wu P. H., Qian H., Lu Y. L., Liang X., Zheng Z. G., Lu Y. Q., Light Sci. Appl., 2015, 4,e253
[26]	Fang Y., Ma L. L., Shan D. L., Lu X. Q., Chem. J. Chinese Universities, 2015, 36(8), 1491—1497
	(方燕, 马琳琳, 陕多亮, 卢小泉.高等学校化学学报, 2015,36(8), 1491—1497)
[27]	Lobo D. E., Banerjee P. C., Easton C. D., Majumder M., Adv. Energy Mater., 2015, 5(19), 1500665
[28]	Luo J. H., Shen P., Yao W., Li X., Dong K., Huang J., Xu Z., Nanoscale Research Letters, 2016, 11(1), 1—14
[29]	Chen Y., Feng J., Dong F. X., Li Y. F., Bi Y. G., Yue Y. Y., Sun H. B., Org. Electron., 2016, 38,35—41
[30]	Strek W., Cichy B., Radosinski L., Gluchowski P., Marciniak L., Lukaszewicz M., Hreniak D., Light Sci. Appl., 2015, 4(1), e237
[31]	Zhang Y. L., Guo L., Xia H., Chen Q. D., Feng J., Sun H. B., Adv. Opt. Mater., 2014, 2(1), 10—28
[32]	Hao H. Y., Wang X., Shao Z. Q., Yang R. J., Chem. J. Chinese Universities, 2015, 36(9), 1838—1845
	(郝红英, 王茜, 邵自强, 杨荣杰.高等学校化学学报, 2015,36(9), 1838—1845)
[33]	Xu H. H., Wang X. L., Chen R., Yu Z. Y., Chem. Res. Chinese Universities, 2014, 30(2), 205—210
[34]	Bi Y. G., Feng J., Li Y. F., Zhuang Y. L., Liu Y. S., Chen L., Liu Y. F., Guo L., Wei S., Sun H. B., ACS Photon., 2014, 1(8), 690—695
[35]	Chen J. H., Zheng B. C., Shao G. H., Ge S. J., Xu F., Lu Y. Q., Light Sci. Appl., 2015, 4(12), e360
[36]	Liu Y. F., Feng J., Zhang Y. F., Cui H. F., Yin D., Bi Y. G., Song J. F., Chen Q. D., Sun H. B., Org. Electron., 2015, 26,81—85
[37]	Chen Z. Z., Xu Z. D., Acta Phys. Sin., 2010, 59(5), 3264—3272
	(陈兆震, 徐则达.物理学报, 2010,59(5), 3264—3272)
[38]	Ma L. N., Zhang J., Jiang S. L., Sun G. B., Yang G. F., Hang L. X., Mi Q., Ji W., Acta Photon. Sin., 2015, 44(10), 1011003
	(马丽娜, 张锦, 蒋世磊, 孙国斌, 杨国锋, 杭凌侠, 弥谦, 计玮.光子学报, 2015,44(10), 1011003)
[39]	Jin Y., Feng J., Zhang X. L., Xu M., Bi Y. G., Chen Q. D., Wang H. Y., Sun H. B., Appl. Phys. Lett., 2012, 101(16), 163303
[40]	Zhang X. L., Feng J., Song J. F., Li X. B., Sun H. B., Opt. Lett., 2011, 36(19), 3915—3917
[41]	Yin D., Feng J., Ma R., Zhang X. L., Liu Y. F., Yang T., Sun H. B., IEEE J. Lightwave Technol., 2015, 33(15), 3327—3331
[42]	Chen X., Jia B. H., Zhang Y. N., Gu M., Light Sci. Appl., 2013, 2,e92