Chem. J. Chinese Universities ›› 2013, Vol. 34 ›› Issue (8): 1812.doi: 10.7503/cjcu20130117

• Article: Inorganic Chemistry • Previous Articles     Next Articles

Controlled Preparation of Te Nanowires/Nanorods by Low Temperature Wet Chemical Methods

HONG Xiao-Jie, FAN Xi-An, ZHANG Hui-Xuan, CAI Xin-Zhi, YANG Fan, LU Lei   

  1. Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan 430081, China
  • Received:2013-01-30 Online:2013-08-10 Published:2013-07-19

Abstract:

In the present work, Te nanowires/nanorods were prepared by low temperature wet chemical methods. The effects of reaction temperature and the dropping rate of reducing agent on the phase and microstructure of the products were investigated. The results showed that the diameter of Te nanowires increased and the length decreased with the increase of reaction temperature. With decreasing the dropping rate of hydrazine hydrate, the length and diameter of the Te nanowires all increased. The growth principle of Te nanowires could be inferred by observing the morphology and structure of the products during different reaction stages. At early stage of the reaction, the TeO2 dissolved in ethylene glycol were reduced into the metastable activated α-Te and stable τ-Te. As the reaction proceeded, metastable α-Te would be re-dissolved and be reduced into the stable τ-Te. The axial growth characteristic along [001] direction of τ-Te crystal should be ascribed to its significant crystal anisotropy.

Key words: Low temperature wet chemical method, Te nanowire, Te nanorod, Semiconductor

CLC Number: 

TrendMD: