高等学校化学学报

高等学校化学学报

• 研究论文 • 上一篇    下一篇

聚3-氯噻吩修饰CdSe纳米棒复合膜电极光电化学性能研究

郝彦忠1,2, 殷志刚2   

    1. 河北科技大学理学院,
    2. 化学与制药工程学院, 石家庄 050018
  • 收稿日期:2006-08-03 修回日期:1900-01-01 出版日期:2007-06-10 发布日期:2007-06-10
  • 通讯作者: 郝彦忠

Photoelectrochemical Studies of P3CT Modified CdSe Nanorod Composite Film Electrode

HAO Yan-Zhong1,2*, YIN Zhi-Gang2   

    1. College of Science,
    2. College of Chemical and Pharmaceutical Engineering, Hebei University of Science and Technology, Shijiazhuang 050018, China
  • Received:2006-08-03 Revised:1900-01-01 Online:2007-06-10 Published:2007-06-10
  • Contact: HAO Yan-Zhong

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被引次数

5

摘要： 采用水热法制备了具有闪锌矿和纤维锌矿结构的CdSe纳米棒. 纳米棒直径约为100 nm, 长度约为300 nm. 当外加电极电势为-0.6 V 时, 经聚3-氯噻吩[Poly(3-chlorothiophene), P3CT]修饰的CdSe纳米棒具有最大光电流, 并且CdSe/P3CT复合膜电极最高光电转换效率(IPCE)为13.5%, 低于CdSe纳米棒膜电极17.7%的最高IPCE. CdSe/P3CT复合膜电极中存在p-n异质结, p-n异质结的存在使得CdSe/P3CT复合膜电极在长波区(>410 nm)的IPCE整体高于CdSe纳米棒薄膜电极的IPCE.

关键词: 聚3-氯噻吩, CdSe/P3CT复合膜电极, 光电化学

Abstract: CdSe nanorods(zinc blende and wulitize) were prepared via hydrothermal method. The CdSe nanorod was formed with a diameter about 100 nm and a length about 300 nm. The photoelectrochemical pro-perties of the CdSe nanorods/P3CT composite film electrode were investigated. The results show that the maximum value of photocurrent appeared at an electrode potential of -0.6 V. The maximum IPCE(13.5%) of the modified film electrode was lower than that of 17.7% CdSe nanorord film electrode. The p-n heterojunction was existed in the CdSe/P3CT composite film electrode.Because of the existence of p-n heterojunction, under certain condition the IPCE of P3CT modified CdSe nanorod was larger than that of CdSe film electrode in the whole long wavelength region(>410 nm).

Key words: Poly(3-chlorothiophene), CdSe/P3CT composite film electrode, Photoelectrochemistry

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