高等学校化学学报

高等学校化学学报 ›› 2003, Vol. 24 ›› Issue (1): 86.

• 论文 • 上一篇    下一篇

硅表面有机单分子膜的新表征方法──界面微分电容测量法

孙乔玉1,2, Catherine Henry de Villeneuve2, 力虎林1, Philippe A llongue2   

  1. 1. 兰州大学化学化工学院, 兰州 730000;
    2. Laboratoire de Physique des Liquides et Electrochimie, CNRS-UPR 15 Conventionnée avec l′Université P & M Curie, 4 place Jussieu, Tour 22, 75005 Paris
  • 收稿日期:2001-09-04 出版日期:2003-01-24 发布日期:2003-01-24
  • 通讯作者: Philippe Allongue(1958年出生),男,研究员,主要从事材料表面科学研究.力虎林(1936年出生),男,教授,博士生导师,主要从事电化学、纳米材料及各种电池方面的研究.
  • 基金资助:

    兰州大学博士科研启动基金资助

A New Technique of the Characterization of Monolayers on Silicon Surfaces──Measure of the Differential Capacity of Interfaces

SUN Qiao-Yu1,2, Henry de Villeneuve Catherine2, LI Hu-Lin1, Allongue Philippe2   

  1. 1. College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou 730000, China;
    2. Laboratoire de Physique des Liquides et Electrochimie, CNRS-UPR 15 Conventionnée avec l′Université P & M Curie, 4 place Jussieu, Tour 22, 75005 Paris
  • Received:2001-09-04 Online:2003-01-24 Published:2003-01-24
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被引次数

4

摘要： 提出一种表征硅表面有机单分子膜的新方法界面微分电容测量法.通过对新制备的H-Si(111)表面和一系列烯烃分子修饰的硅表面/电解液界面的微分电容的研究,建立了硅表面有机膜结构和性质与界面电容之间的联系.实践证明这是一个简便、快速和有效的实验技术,为硅表面化学修饰与功能化研究提供了一个非常有力的工具.

关键词: 硅表面单分子膜, 微分电容, 表征方法

Abstract: We suggest a new technique to characterize the organic monolayers on silicon surfacesmeasurement of the differential capacity-electrode potential curve. By means of the investigation of differential capacity of a series of alkenes-modified silicon surfaces and H-Si(111)/electrolyte interfaces, we have established the relationship between the structure of the organic monolayers on silicon surfaces and their interface differential capacity. It has been confirmed to be a simple, quick, and effective experimental technique for the research of chemical modifications and functions on the silicon surfaces.

Key words: Monolayers on silicon surfaces, Differential capacity, Characteristic technique

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