高等学校化学学报

高等学校化学学报 ›› 2011, Vol. 32 ›› Issue (12): 2739.

• 研究论文 • 上一篇    下一篇

宽带隙Cu(In,Al)Se2薄膜的制备及表征

黄灿领,  胡彬彬,  王广君,  李洪伟,  龚时江,  杜祖亮   

  1. 河南大学特种功能材料教育部重点实验室,  开封   475004
  • 收稿日期:2011-04-02 修回日期:2011-08-01 出版日期:2011-12-10 发布日期:2011-11-25
  • 通讯作者: 杜祖亮 E-mail:zld@henu.edu.cn
  • 基金资助:

    国家自然科学基金(批准号: 100874040)、教育部科技创新工程重大项目培育资金项目(批准号: 708062)和河南省科技创新杰出人才基金(批准号: 114200510015)资助.

Preparation and Characterization of Wide-bandgap Cu(In, Al)Se2 Thin Films

HUANG Can-Ling, HU Bin-Bin, WANG Guang-Jun, LI Hong-Wei,  GONG Shi-Jiang, DU Zu-Liang*   

  1. Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng 475004, China
  • Received:2011-04-02 Revised:2011-08-01 Online:2011-12-10 Published:2011-11-25
  • Contact: DU Zu-Liang E-mail:zld@henu.edu.cn
  • Supported by:

    国家自然科学基金(批准号: 100874040)、教育部科技创新工程重大项目培育资金项目(批准号: 708062)和河南省科技创新杰出人才基金(批准号: 114200510015)资助.

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被引次数

15

摘要： 以特殊脉冲电沉积方法制备CuInSe2(CIS)前驱体薄膜, 通过真空蒸镀法在CIS薄膜上沉积Al膜, 经硒化退火后在氧化铟锡(ITO)基底上制备了Cu(InAl)Se2(CIAS)薄膜. 采用扫描电子显微镜(SEM)、X射线能谱(EDS)、X射线衍射(XRD)、X射线光电子能谱(XPS)、紫外-可见吸收光谱(UV-Vis)对其形貌、结构、成分及光学吸收性质进行了表征. 结果表明, 制备的CIAS薄膜颗粒均匀, 表面平整致密, 呈黄铜矿结构. 薄膜在可见光区具有良好的吸收, 带隙约为1.65 eV.

关键词: 特殊脉冲电沉积, 真空蒸镀, CuInSe2薄膜, Cu(InAl)Se2薄膜

Abstract: The precursor thin films of CuInSe2(CIS) were prepared using a special pulse electrodeposition method and Al was deposited on the CIS thin films through the vacuum evaporation method. The Cu(In, Al)Se2(CIAS) thin films were successfully fabricated by annealing the composite thin films of CIS and Al. The morphology, structure, composition and optical absorbance property of the CIAS thin films were characterized by  SEM, EDS, XRD, XPS and UV-Vis, respectively. The CIAS thin films composed of uniform particles present a chalcopyrite structure, and the surface is smooth and compact. The CIAS thin film has good absorption in the visible region, and the band gap is about 1.65 eV. 

Key words: Special pulse electrodeposition, Vacuum evaporation, CuInSe2 thin film, Cu(In, Al)Se2 thin film

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