高等学校化学学报

高等学校化学学报 ›› 2011, Vol. 32 ›› Issue (1): 139.

• 研究论文 • 上一篇    下一篇

利用Kelvin探针力显微镜研究纳米尺度下n-AlGaN/GaN薄膜的表面电荷性质

王凌凌,杨文胜,王德军,谢腾峰   

  1. 吉林大学化学学院, 长春 130012
  • 收稿日期:2010-04-02 修回日期:2010-05-05 出版日期:2011-01-10 发布日期:2010-12-11
  • 通讯作者: 谢腾峰 E-mail:xietf@jlu.edu.cn
  • 基金资助:

    国家重点基础研究发展计划项目(批准号: 2007CB613303)和国家自然科学基金(批准号: 20703020, 20873053)资助.

Surface Charge Characteristics of n-AlGaN/GaN Heterostructures Films in Nano-scale by Kelvin Probe Force Microscopy in Vacuum

WANG LingLing,YANG WenSheng,WANG DeJun,XIE TengFeng   

  1. College of Chemistry, Jilin University, Changchun  130012, China
  • Received:2010-04-02 Revised:2010-05-05 Online:2011-01-10 Published:2010-12-11
  • Contact: XIE TengFeng E-mail:xietf@jlu.edu.cn
  • Supported by:

    国家重点基础研究发展计划项目(批准号: 2007CB613303)和国家自然科学基金(批准号: 20703020, 20873053)资助.

PDF (PC)

被引次数

2

摘要： 本论文利用真空KFM技术研究了纳米尺度下n-AlGaN/GaN薄膜的表面电荷性质并对其进行了定量测量，结果发现n-AlGaN/GaN薄膜的表面位错均为电活性的受主型表面态，所捕获电荷的区域远远大于表面位错的大小，其最大表面接触电势差达到了590mV。在光的照射下，n-AlGaN/GaN薄膜的表面电荷发生了明显的光生电荷重新分布现象

关键词: AlGaN/GaN异质薄膜, KFM, 表面电势, 光生电荷转移

Abstract: The surface charges characteristics of n-AlGaN/GaN heterostructures films in nano scale have been studied by means of KFM technique in vaccum conditions. The results showed that all the dislocations of n-AlGaN/GaN heterostructures films were negatively charged, and the maxinum contact potential difference was about 590mV. Moreover the contact potential variations around the dislocations in n-AlGaN/GaN heterostructures films was much larger than that of dislocations in diameter. The photo-generated charges rediscontribution has been observed also under illumination. This result indicates that surface charges of semiconductor in nano-scale can be measured quantitatively by KFM in vacuum condition.

Key words: AlGaN/GaN Heterostructures, surface potential, KFM, photo-generated charges transfer

TrendMD: