ZnO纳米棒薄膜的湿化学法制备及光致发光特性

高等学校化学学报 ›› 2010, Vol. 31 ›› Issue (6): 1113.

ZnO纳米棒薄膜的湿化学法制备及光致发光特性

温艳, 王育华

兰州大学物理科学与技术学院, 兰州 730000

收稿日期:2009-09-30 出版日期:2010-06-10 发布日期:2010-06-10
通讯作者: 王育华, 男, 博士, 教授, 博士生导师, 主要从事发光材料的制备及性能研究. E-mail: wyh@lzu.edu.cn
基金资助:
国家自然科学基金(批准号： 10874061)资助.

Photoluminescence Properties of ZnO Nanorod Films Prepared by Wet-chemical Method

WEN Yan, WANG Yu-Hua*

School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China

Received:2009-09-30 Online:2010-06-10 Published:2010-06-10
Contact: WANG Yu-Hua. E-mail: wyh@lzu.edu.cn
Supported by:
国家自然科学基金(批准号： 10874061)资助.

摘要/Abstract

摘要：

在80 ℃水浴下, 采用简易的湿化学法在不导电玻璃基底上制备了ZnO纳米棒阵列, 利用X射线衍射仪(XRD)和场发射扫描电镜(FE-SEM)对样品的结构形貌进行了表征. 结果表明, 晶化30 min所得产物为六方纤锌矿相的ZnO纳米棒, 直径大约为80~90 nm. 为了分析不同的低温退火温度和退火气氛对其光致发光性能的影响, 研究了ZnO纳米棒薄膜在不同的后处理条件下的光致发光谱(PL). 实验结果表明, 在O₂气氛下于450 ℃退火1 h后, ZnO纳米棒薄膜的红光发射(约650 nm)强度相对在空气和5%H₂/95%N₂气氛下退火的样品变得更强, 而且该样品的激发波长范围(200~370 nm)与近紫外发光二极管(LEDs)的发射波长范围(350~420 nm)匹配得很好.

关键词: ZnO纳米棒薄膜; 湿化学法; 低温退火; 光致发光; 发光二极管

Abstract:

Pure ZnO nanorod films were fabricated on nonconductive glass substrates by the simple wet-chemical method at 80 ℃. The structures and morphology of as-gown ZnO nanorod films were investigated by X-ray diffraction(XRD) and scanning electron microscopy(SEM). The results show that the nanorod array at the growth time of 30 min is Wurtzite structure and the mean diameter is about 80—90 nm. Besides, the photoluminescence(PL) properties of ZnO nanorod films at different low anneal temperatures as well as different anneal atmospheres are also studied. It is indicated that the ZnO film annealed at 450 ℃ in O₂ atmosphere for 1 h shows a stronger visible emission in the range of 550—750 nm with a maximum peak at 650 nm than the films annealed in the air and 5%H₂/95%N₂ atmosphere, and the broad absorption band of the sample(200—370 nm) is well matched with the emission wavelength of the long-ultraviolet(long-UV) light emitting diodes(LEDs)(λ_ex=350—420 nm).

Key words: ZnO nanorod film; Wet-chemical method; Low temperature anneal; Photoluminescence; Light emitting diode(LED)

TrendMD:

温艳, 王育华. ZnO纳米棒薄膜的湿化学法制备及光致发光特性. 高等学校化学学报, 2010, 31(6): 1113.

WEN Yan, WANG Yu-Hua*. Photoluminescence Properties of ZnO Nanorod Films Prepared by Wet-chemical Method. Chem. J. Chinese Universities, 2010, 31(6): 1113.

参考文献

[1]Wang Z. L.. J. Phys : Condens Matter[J], 2004, 16: R829—R858
[2]Özgür Ü., Alivov Y. I., Liu C., Teke A., Reshchikov M. A., Doan S., Avrutin V., Cho S. J., Morko H.. J. Appl. Phys.[J], 2005, 98: 041301-1—041301-103
[3]Tang Z. K., Wong G. K. L., Yu P., Kawasaki M., Ohtomo A., Koinuma H., Segawa Y.. Appl. Phys. Lett.[J], 1998, 72: 3270—3272
[4]Guo B., Qiu Z. R., Wong K. S.. Appl. Phys. Lett.[J], 2003, 82: 2290—2292
[5]Mahalingam T., Lee K. M., Park K. H., Lee S., Ahn Y., Park J. Y., Koh K. H.. Nanotechnology[J], 2007, 18: 035606-1—035606-5
[6]Banerjee D., Lao J. Y., Wang D. Z., Huang J. Y., Steeves D., Kimball B., Ren Z. F.. Nanotechnology[J], 2004, 15: 404—409
[7]ZHOU Ze-Guang(周泽广), CHAI Chun-Fang(柴春芳), MI Yan(米艳), TAN Xue-Cai(谭学才), WU Jian(吴健), HUANG Zai-Yin(黄在银), YUAN Ai-Qun(袁爱群). Chem. J. Chinese Universities(高等学校化学学报)[J], 2007, 28 (10): 1812—1816
[8]Andelman T., Gong Y., Polking M., Yin M., Kuskovsky I., Neumark G., O′Brien S.. J. Phys. Chem. B[J], 2005, 109: 14314—14318
[9]Chen Y. F., Kim M., Lian G. D., Johnson M. B., Peng X. G.. J. Am. Chem. Soc.[J], 2005, 127: 13331—13337
[10]Wang Y. S., Thomas P. J., Brien P. O.. J. Phys. Chem. B[J], 2006, 110: 4099—4104
[11]Abdullah M., Lenggoro I. W., Okuyama K., Shi F. G.. J. Phys. Chem. B[J], 2003, 107: 1957—1961
[12]Xiong H. M., Wang Z. D., Xia Y. Y.. Adv. Mater.[J], 2006, 18: 748—751
[13]Fu Y. S., Du X. W., Kulinich S. A., Qiu J. S., Qin W. J., Li R., Sun J., Liu J.. J. Am. Chem. Soc.[J], 2007, 129: 16029—16033
[14]Chopra K. L., Major S., Pandaya D. K.. Thin Solid Films[J], 1983, 102: 1—46
[15]Tam K. H., Cheung C. K., Leung Y. H., Djuriic′ A. B., Ling C. C., Beling C. D., Fung S., Kwok W. M., Chan W. K., Phillips D. L., Ding L., Ge W. K.. J. Phys. Chem. B[J], 2006, 110: 20865—20871
[16]Studenikin S. A., Golego N., Cocivera M.. J. Appl. Phys.[J], 1998, 84: 2287—2294
[17]Cross R. B. M., de Souza M. M., Sankara Narayanan E. M.. Nanotechnology[J], 2005, 16: 2188—2292
[18]Greene L. E., Law M., Goldberger J., Kim F., Johnson J. C., Zhang Y. F., Saykally R. J., Yang P. D.. Angew. Chem. Int. Ed.[J], 2003, 42: 3031—3034
[19]Li D., Leung Y. H., Djuriic′ A. B., Liu Z. T., Xie M. H., Shi S. L., Xu S. J., Chan W. K.. Appl. Phys. Lett.[J], 2004, 85: 1601— 1603
[20]Xie R., Sekiguchi T., Ishigaki T., Li D. S.,Yang D. R., Liu B. D., Bando Y..Appl. Phys. Lett.[J], 2006, 88: 134103-1—134103-3
[21]Shi G. A., Stavola M., Pearton S. J., Thieme M., Lavrov E. V., Weber J.. Phys. Rev. B[J], 2005, 72: 195211-1—195211-8