水热法制备ZnS∶Cu,Al纳米X射线发光粉及其光谱特性

高等学校化学学报 ›› 2010, Vol. 31 ›› Issue (4): 644.

水热法制备ZnS∶Cu,Al纳米X射线发光粉及其光谱特性

新梅^1,2, 曹望和¹

1. 大连海事大学光电子技术研究所, 大连 116026;
2. 大连民族学院理学院物理系, 大连 116600

收稿日期:2009-08-17 出版日期:2010-04-10 发布日期:2010-04-10
通讯作者: 新梅, 女, 讲师, 主要从事纳米材料、纳米发光材料与器件的研究. E-mail: xinmei_dl@126.com
基金资助:
国家自然科学基金(批准号: 10374011)和大连民族学院青年基金项目(批准号: 2008A207)资助.

Hydrothermal Preparation and Optical Properties of ZnS∶Cu,Al Nanocrystals Excited by X-ray

XIN Mei^1,2*, CAO Wang-He¹

1. Optoelectronic Technology Institute, Dalian Maritime University, Dalian 116026, China;
2. Physics Department, College of Science, Dalian Nationalities University, Dalian 116600, China

Received:2009-08-17 Online:2010-04-10 Published:2010-04-10
Contact: XIN Mei. E-mail: xinmei_dl@126.com
Supported by:
国家自然科学基金(批准号: 10374011)和大连民族学院青年基金项目(批准号: 2008A207)资助.

摘要/Abstract

摘要：

采用水热法低温(200 ℃)处理12 h直接制备ZnS∶Cu, Al纳米晶, 并探讨其光致(PL)和X射线激发(XEL)光谱特性及后续退火处理的影响. XRD和TEM分析表明, 水热法直接制备的ZnS∶Cu, Al粒径约为15 nm, 尺寸分布窄, 分散性好, 具有纯立方相的球形结构. 其PL和XEL光谱均为宽带谱, n(Cu)/n(Zn)=3×10^-4和n(Cu)/n(Al)= 0.5时PL和XEL光谱强度最大, XEL峰值在470 nm处. 在此条件下, 水热处理3 h直接合成的纳米晶在氩气保护下于800 ℃退火1 h后样品的XEL发光进一步增强. XEL光谱强度约是退火前样品的8倍, 此时峰值波长在520 nm, 团聚形成径为200～500 nm的类球形六方相结构. 发光强度增强, 但粒径很小, 对提高成像系统分辨率非常有意义. 通过比较样品的XEL和PL光谱, 讨论了XEL和PL光谱的发光机理和激发机制及退火对其特性的影响.

关键词: ZnS∶Cu, Al; 纳米结构; 水热法; 光致发光; X射线激发发光; 退火

Abstract:

ZnS∶Cu, Al nanocrystals were hydrothermally prepared at 200 ℃ and their photoluminescence(PL) and X-ray excited luminescence(XEL) properties were investigated. The effect of further annealing was also studied in detail. The average gain size of the samples with n(Cu)/n(Zn)=3×10^-4 and n(Cu)/n(Al)=2, which was directly hydrothermal-treated at 200 ℃ for 12 h, is about 15 nm; the spherical-like nanocrystals with well dispersity and narrow gain size distribution show cubic structure. The PL and XEL spectra of all of the samples show a broad emission band. The maximum PL and XEL intensities are observed for sample with n(Cu)/n(Zn)=3×10-4 and n(Cu)/n(Al)=0.5. The XEL peak center is at about 470 nm. In this condition, the XEL intensity of the sample which was hydrothermally treated at 200 ℃ for 3 h then annealed in Ar at 800 ℃ for 1 h is enhanced and the peak is located at 520 nm. In the meantime, the XEL intensity is about eight times by comparison with that of the samples without annealing. The particles′ agglomerate size is about 200—500 nm and roughly spherical particles show pure hexagonal structure. The samples with highly luminescence efficiencies and the smaller size could enhance the resolution of imaging systems. By comparing the PL and XEL spectra, the luminescence mechanism and different excitation mechanism of PL and XEL and effect of annealing on XEL were also discussed.

Key words: ZnS∶Cu, Al; Nanostructure; Hydrothermal method; Photoluminescence; X-ray excited luminescence; Annealing

TrendMD:

新梅, 曹望和. 水热法制备ZnS∶Cu,Al纳米X射线发光粉及其光谱特性. 高等学校化学学报, 2010, 31(4): 644.

XIN Mei*, CAO Wang-He. Hydrothermal Preparation and Optical Properties of ZnS∶Cu,Al Nanocrystals Excited by X-ray. Chem. J. Chinese Universities, 2010, 31(4): 644.

参考文献

[1]Moharial S. V.. Bull. Mater. Sci.[J], 1994, 17: 25—33
[2]Brixner L. H.. Mater. Chem. Phys.[J], 1987, 16: 253—281
[3]Issler S. L., Torardi C. C.. J. Alloys. Compd.[J], 1995, 229: 54—65
[4]Kandarakis I., Cavouras D., Panayiotakis G. S., et al.. Phys. Med. Biol.[J], 1997, 42: 1351—1373
[5]Kandarakis I., Cavouras D., Nomicos C. D., et al.. Nucl. Instrum. Methods. Phys. Res. Sect. B[J], 2001, 179: 215—224
[6]Kandarakis I., Cavouras D., Nikolopoulos D., et al.. Rad. Meas.[J], 2005, 39(3): 263—275
[7]Qi L., Lee B. I., Kim J. M., et al.. J. Lumin.[J], 2003, 104: 261—266
[8]Corrado C., Jiang Y., Oba F., et al.. J. Phys. Chem. A[J], 2009, 113(16): 3830—3839
[9]WANG Zhi-Peng(王志鹏)., LI Xiao-Dong(李晓东), LUO Qun(罗群), et al.. Chem. J. Chinese Universities(高等学校化学学报)[J], 2006, 27: 527—530
[10]JIAN Wen-Ping(管文平)., ZHANG Da-Wei(张大巍), WANG Ling-Ling(王凌凌), et al.. Chem. J. Chinese Universities(高等学校化学学报)[J], 2006, 27(12): 2340—2343
[11]Wang X. F., Xu J. J., Chen H. Y.. J. Phys. Chem. C.[J], 2008, 112: 17581—17585
[12]Luo X. X., Cao W. H., Zhou L. X.. J. Lumin.[J], 2007, 122—123: 812—815
[13]XIN Mei(新梅), CAO Wang- He(曹望和). Journal of Functional Materials(功能材料)[J], 2009, 40(2): 328—331
[14]XU Rong-Hui(许荣辉), WANG Yong-Xian(汪勇先), JIA Guang-Qiang(贾广强), et al.. Chem. J. Chinese Universities(高等学校化学学报)[J], 2007, 28(2): 217—219
[15]Yue G. H., Yan P. X., An D. Y., et al.. Appl. Phys.[J], 2006, A84: 409—412
[16]Chen Y. Y., Duh J. G., Chiou B. S., et al.. J. Thin Solid Films[J], 2001, 392: 50—55
[17]Lu H. Y., Chu S. Y.. J. Crystal Growth[J], 2004, 265: 476—481
[18]ZHANG Xiao-Bo(张小波), SONG Hong-Wei(宋宏伟), YU Li-Xin(于立新), et al.. Chinese Journal of Luminescence(发光学报)[J], 2004, 25(1): 67—71
[19]Zhang X. B., Song H. W., Yu L. X., et al.. J. Lumin.[J], 2006, 118: 251—256
[20]Sang W. B., Qian Y. B., Min J. H., et al.. Solid State Commun.[J], 2002, 121: 475—478
[21]Lee J. C., Park D. H.. Mater. Lett.[J], 2003, 57: 2872—2878
[22]Manzoor K., Vadera S. R., Kumar N., et al.. Mater. Chem. Phys.[J], 2003, 82: 718—725
[23]Yang P., Song C. F., Lü M. K., et al.. J. Phys. Chem. Solids[J], 2002, 63: 639—643
[24]XU Xu-Rong(徐叙瑢), SU Mian-Zeng(苏勉曾). Luminescence and Luminescence Materials(发光学与发光材料)[M], Beijing: Chemical Industry Press, 2004: 466—468
[25]XIN Mei(新梅), CAO Wang-He(曹望和). Spectroscopy and Spectral Analysis(光谱学与光谱分析)[J], 2009, 29(8): 2272—2275
[26]Sugimoto T., Wu S., Itoh H., et al.. J. Colloid Interface Sci.[J], 2003, 257: 47—55