CuInSe2薄膜的电化学沉积及其形成机理

高等学校化学学报 ›› 2010, Vol. 31 ›› Issue (2): 330.

CuInSe₂薄膜的电化学沉积及其形成机理

吴免利, 李劼, 刘芳洋, 刘军, 赖延清, 张治安, 刘业翔

中南大学冶金科学与工程学院, 长沙 410083

收稿日期:2009-03-03 出版日期:2010-02-10 发布日期:2010-02-10
通讯作者: 李劼, 男, 博士, 教授, 博士生导师, 主要从事新能源材料和工业电化学研究. E-mail: csulightmetals@126.com
基金资助:
湖南省自然科学基金(批准号: 09JJ3110)和湖南省研究生创新基金(批准号: 1343-74236000009)资助.

Electrodeposition of CuInSe₂ and Its Formation Mechanism

WU Mian-Li, LI Jie*, LIU Fang-Yang, LIU Jun, LAI Yan-Qing, ZHANG Zhi-An, LIU Ye-Xiang

School of Metallurgical Science and Engineering, Central South University, Changsha 410083, China

Received:2009-03-03 Online:2010-02-10 Published:2010-02-10
Contact: LI Jie. E-mail: csulightmetals@126.com
Supported by:
湖南省自然科学基金(批准号: 09JJ3110), 湖南省研究生创新基金(批准号: 1343-74236000009)资助.

摘要/Abstract

摘要：

采用电化学沉积法制备了太阳电池用CuInSe₂薄膜. 利用循环伏安法(CV)、X射线能谱(EDS)和X射线衍射技术(XRD)研究了电沉积过程中CuInSe₂的形成机理, 并研究了制备工艺对膜层成分、形貌和物相结构的影响. 研究结果表明, 铟进入固相是通过In³⁺受Cu₃Se₂诱导作用欠电势还原或者In³⁺与H₂Se反应这两种途径实现; 先沉积的Cu₃Se₂与新生成的铟或铟硒化合物反应最后生成CuInSe₂. 在阴极电位为-0.58~-0.9 V(vs. SCE)时出现了不随电位变化的极限还原电流, 在该电位范围内进行电沉积获得了化学计量组成稳定可控且相对致密平整的CuInSe₂薄膜. 电沉积的CuInSe₂薄膜经真空退火处理后结晶质量得到明显改善.

关键词: CuInSe2; 太阳电池; 电化学沉积; 形成机理; 诱导作用; 退火处理

Abstract:

In this paper, CuInSe₂ thin films were prepared by electrodeposition. The formation mechanism of CuInSe₂ was primarily analyzed by cyclic voltammetry(CV), energy dispersive X-ray spectroscopy(EDS) and X-ray diffraction(XRD). The influence of deposition conditions on film stoichiometry, morphology and structure was also investigated. It was shown that the insertion of In into solid phase may proceed underpotential deposition mechanism involving two different routes: In³⁺ reduction by induced effect of Cu₃Se₂, and/or reaction with H₂Se. The newly generated In and indium selenides may be assimilated into the formation CuInSe₂ by reaction with copper selenides. A limiting current was observed at potentials between -0.58—-0.9 V vs. the saturated calomel electrode(SCE) at which smooth and dense CuInSe₂ thin films with controllable stoichiometry were obtained. Crystallinity of electrodeposited films was improved largely after annealing.

Key words: CuInSe2; Solar cell; Electrodeposition; Formation mechanism; Induced effect; Annealing

TrendMD:

吴免利, 李劼, 刘芳洋, 刘军, 赖延清, 张治安, 刘业翔. CuInSe₂薄膜的电化学沉积及其形成机理. 高等学校化学学报, 2010, 31(2): 330.

WU Mian-Li, LI Jie*, LIU Fang-Yang, LIU Jun, LAI Yan-Qing, ZHANG Zhi-An, LIU Ye-. Electrodeposition of CuInSe₂ and Its Formation Mechanism. Chem. J. Chinese Universities, 2010, 31(2): 330.

参考文献

[1]Rockett A., Abou-Elfotouh F., Albin D., et al.. Thin Solid Films[J], 1994, 237: 1—11
[2]Sharma R. P., Sharma K.C., Garg J. C.. J. Phys. D: Appl. Phys.[J], 1991, 24: 2084—2087
[3]Kavcar N., Carter M. J., Hill R.. Sol. Energy Mater. Sol. Cells.[J], 1992, 27: 13—23
[4]Guillen C., Herrero J.. Sol. Energy Mater. Sol. Cells.[J], 1996, 43: 47—57
[5]Repinsl I., Contreras M. A., Egaas B., et al.. Prog. Photovolt. Res. Appl.[J], 2008, 16: 235—239
[6]Kang Soon Hyung, Kim Yu-Kyung, Choi Don-Soo, et al.. Electrochimica Acta[J], 2006, 51(21): 4433—4438
[7]Xia D. L., Li J. Z., Xu M., et al.. Journal of Non-Crystalline Solids[J], 2008, 354: 1447—1450
[8]Chaure N. B., Young J., Samantilleke A. P., et al.. Solar Energy Materials & Solar Cells[J], 2004, 81: 125—133
[9]Bhattacharya R. N., Hiltner J. F., Batchelor W., et al.. Sites. Thin Solid Films[J], 2000, 361/362: 396—399
[10]Friedfeld R., Raffaelle R. P., Mantovani J. G.. Solar Energy Materials & Solar Cells[J], 1999, 58: 375—385
[11]CHI Yu-Juan(池玉娟), FU Hong-Gang(付宏刚), SHI Ke-Ying(史可英), et al.. Chem. J. Chinese Universities(高等学校化学学报)[J], 2007, 28(12): 2364—2368
[12]Kampmann A., Sittinger V., Rechid J., et al.. Thin Solid Films[J], 2000, 361/362: 309—313
[13]Lincot D., Guillemoles J. F., Taunier S., et al.. Solar Energy[J], 2004, 77(6): 725—737
[14]Calixto M. E., Dobson K. D., McCandless B. E., et al.. Journal of The Electrochemical Society[J], 2006, 153(6): G521—G528
[15]Nakamura S., Sugawara S., Hashimoto A., et al.. Solar Energy Materials and Solar Cells[J], 1998, 50(1—4): 25—30
[16]Massaccesi S., Sanchez S., Vedel J.. J. Electrochem. Soc.[J], 1993, 140(9) : 2540—2546
[17]Mishra K. K., Rajeshwar K.. J. Electroanal. Chem.[J], 1989, 273: 169—182
[18]Pottier D., Maurin G.. J. Appl. Electrochem.[J], 1989, 19: 361—367
[19]Calixto M. E.,. Dobson K. D., McCandless B. E., et al.. Mater. Res. Soc. Symp. Proc.[J], 2005, 865: F14.17.1—F14.17.6
[20]Oliveira M. C. F., Azevedo M., Cunha A.. Thin Solid Films[J], 2002, 405: 129—134
[21]Molin A. N., Dikusar A. I., Kiosse G. A., et al.. Thin Solid Films[J], 1994, 237(1/2): 66—71
[22]Kemell M., Ritala M., Saloniemi H., et al.. Journal of The Electrochemical Society[J], 2000, 147(3): 1080—1087
[23]Stratieva N., Tzvetkova E., Ganchev M., et al.. Solar Energy Materials and Solar Cells[J], 1997, 45(1): 87—96
[24]Guillen C., Herrero J.. J. Electrochern. Soc.[J], 1994, 141(1): 225—230

CuInSe₂薄膜的电化学沉积及其形成机理

Electrodeposition of CuInSe₂ and Its Formation Mechanism

PDF (PC)

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 0

编辑推荐

Metrics

本文评价