高等学校化学学报

高等学校化学学报 ›› 2009, Vol. 30 ›› Issue (5): 971.

• 研究论文 • 上一篇    下一篇

磁控溅射制备的铜钒氧化物薄膜及其电化学性能

张梁堂1, 宋杰2, 蔡敏真3, 徐富春4, 吴孙桃5, 董全峰2   

    1. 厦门大学物理与机电工程学院机电工程系,
    2. 化学化工学院化学系,
    3. 物理与机电工程学院物理系,
    4. 化学化工学院分析测试中心,
    5. 萨本栋微机电研究中心, 厦门 361005
  • 收稿日期:2008-08-13 出版日期:2009-05-10 发布日期:2009-05-10
  • 通讯作者: 吴孙桃, 男, 教授, 博士生导师, 主要从事MEMS器件研究, E-mail: wst@xmu.edu.cn; 董全峰, 男, 博士, 教授, 博士生导师, 主要从事电化学研究, E-mail: qfdong@xmu.edu.cn
  • 基金资助:

    国家“九七三”计划(批准号: 2002CB211807)、国防基础研究项目(原国防科工委)(批准号: A14220080188-08)和福建省化学电源科技创新平台(批准号: 2006H0090)资助.

Structure and Electrochemical Performance of Copper Doped Vanadium Oxide Thin Films Deposited by RF Magnetron Sputtering

ZHANG Liang-Tang1,5, SONG Jie2, CAI Min-Zhen3,5, XU Fu-Chun4, WU Sun-Tao5*, DONG Quan-Feng2*   

    1. Department of Mechanical and Electrical Engineering,
    2. College of Chemistry & Chemical Engineering,
    3. Department of Physics,
    4. Analysis and Testing Center,
    5. Pen Tung Sah MEMS Research Center, Xiamen University, Xiamen 361005, China
  • Received:2008-08-13 Online:2009-05-10 Published:2009-05-10
  • Contact: WU Sun-Tao, E-mail: wst@xmu.edu.cn; DONG Quan-Feng, E-mail: qfdong@xmu.edu.cn

PDF (PC)

被引次数

11

摘要：

采用射频磁控溅射技术在硅基底上分别制备了无掺杂和掺杂Cu的氧化钒薄膜. X射线衍射(XRD)分析和扫描电子显微镜(SEM)观察表明, 无掺杂的薄膜为多晶V2O5, 掺杂Cu的薄膜为非晶态. X射线光电子能谱(XPS)分析结果表明, 掺杂Cu的薄膜为铜钒氧化物膜, 其中Cu离子表现为+2价, V离子为+4与+5价的混合价态. 随着Cu掺杂量的增大, +4价V的含量增加. 电化学测试结果表明, V2O5薄膜在掺杂Cu以后其放电容量有显著的提高, 其中Cu2.1VO4.4薄膜在100次循环后容量还保持为83.4 μA·h·cm-2·μm-1, 表现出较高的放电容量和较好的循环性能.

关键词: 铜钒氧化物薄膜, 磁控溅射, 阴极材料, 电化学性能

Abstract:

V2O5 was used as cathode material for all solid state thin film lithium-ion batteries, so as to improve electrochemical properties of V2O5 thin film material. In this paper, copper doped and undoped vanadium oxide films were deposited on silicon substrates by RF magnetron sputtering. The films were characterized by XRD, SEM and XPS. The results show that undoped thin films are polycrystalline-V2O5 and copper doped thin films are amorphous copper-vanadium oxide. The Cu ions are at +2 oxidation state, while the V ions are mixed with +4 and +5 oxidation state. With increasing the concentration of doped Cu, the ratio of V4+/V5+ increases. The electrochemical tests show that doping copper contribute to increase the capacity of V2O5 films. The film with a composition of Cu2.1VO4.4 indicate highest capacity among all samples and is observed better cycleability, which is 83.4 μA·h·cm-2·μm-1 up to 100 cycles.

Key words: Copper-vanadium oxide, RF magnetron sputtering, Cathode material, Electrochemical property

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