高等学校化学学报 ›› 2009, Vol. 30 ›› Issue (12): 2363.

• 研究论文 • 上一篇    下一篇

4,4′-双(4″,4″,4″-三氟代-1″,3″-二氧代丁基)联苯铕配合物的合成及发光性能

刘生桂1,2, 王慧慧1, 何沛1, 石建新1, 龚孟濂1   

  1. 1. 中山大学化学与化学工程学院, 光电材料与技术国家重点实验室, 广州 510275;
    2. 湛江师范学院化学科学与技术学院, 广东高校新材料工程技术开发中心, 湛江 524048
  • 收稿日期:2008-12-29 出版日期:2009-12-10 发布日期:2009-12-10
  • 通讯作者: 刘生桂, 男, 博士, 讲师, 主要从事发光配合物研究. E-mail: lsgui@sohu.com
  • 基金资助:

    国家自然科学基金(批准号: 50672136)和中国博士后科学基金(批准号: 20080440785)资助.

Synthesis and Luminescence of Eu(Ⅲ) Complexes Based on 4,4′- Bis(4″,4″,4″-trifluoro -1″,3″-dioxobutyl)-biphenyl

LIU Sheng-Gui1,2*, WANG Hui-Hui1, HE Pei1, SHI Jian-Xin1, GONG Meng-Lian1   

  1. 1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou 510275, China;
    2. Development Center for New Materials Engineering & Technology in Universities of Guangdong, School of Chemistry Science and Technology, Zhanjiang Normal University, Zhanjiang 524048, China

  • Received:2008-12-29 Online:2009-12-10 Published:2009-12-10
  • Contact: LIU Sheng-Gui. E-mail: lsgui@sohu.com
  • Supported by:

    国家自然科学基金(批准号: 50672136)和中国博士后科学基金(批准号: 20080440785)资助.

摘要:

合成了2个新的配合物Eu2(btb)3(H2O)4(1)和Eu2(btb)3(phen)2(2)[H2btb=4,4′-双(4″,4″,4″, -三氟代 - 1″,3″-二氧代丁基)联苯, phen=1,10-邻菲罗啉]. 采用元素分析、红外光谱、紫外光谱和快原子轰击质谱表征了2个配合物的结构. 在近紫外光激发下, 配合物1和2都发射出强的铕离子特征红光. 对614 nm 红光进行监控, 其激发光谱在395 nm处具有最大的激发强度, 与InGaN芯片发射的近紫外光激发相匹配. 将配合物1和2与395 nm 发射的InGaN芯片进行组合制备了红色发光二极管. 在配合物和硅树脂的质量比为1∶25的情况下, 2个红色发光二极管的色坐标分别为x1=0.5210, y1=0.2285(配合物1); x2=0.5835和y2=0.2857(配合物 2), 位于标准的国际色坐标红色区域; 器件的发光效率分别为0.65和0.76 lm/W. 研究结果表明, 配合物1和2是制作白光二极管可供选用的红色发光材料.

关键词: 铕配合物; 化学合成; 荧光粉; 发光

Abstract:

Two complexes Eu2(btb)3(H2O)4(1) and Eu2(btb)3(phen)2(2)[H2btb=4, 4′-bis(4″, 4″, 4″-trifluoro-1″,3″-dioxobutyl)-biphenyl, phen=1,10-phenanthroline] were synthesized. Their structures were characterized by elemental analysis, IR, UV and FAB-Ms. Both two complexes emit red luminescence, characteristic of the 5D0 → 7FJ (J=0—4) emission bands of Eu3+ under near UV irradiation. Monitored at 614 nm, the strongest excitation wavelength located at 395 nm, which matched to the emission light of InGaN chip. Two red conversion light-emitting diodes(LEDs) devices were fabricated by coating complex onto InGaN-based LED chip that emits 395 nm light. When the mass ratio of the red phosphor to the silicone was 1∶25, the two LEDs CIE chromaticity coordinates(complex 1: x1=0.5210, y1=0.2285; complex 2: x2=0.5835, y2=0.2857) are close to the National Television Standard Committee(NTSC) standard values for red color, the luminescence efficiency of devices are 0.65 lm/W for complex 1, 0.76 lm/W for complex 2. The results indicate that complexes Eu2(btb)3(H2O)4 and Eu2(btb)3(phen)2 can act as red components in the fabrication of white LED.

Key words: Europium complex; Chemical synthesis; Phosphor; Luminescence

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