高等学校化学学报 ›› 2006, Vol. 27 ›› Issue (1): 104-107.

• 研究论文 • 上一篇    下一篇

低介电多孔薄膜的制备及形成机制研究

徐洪耀, 王献彪, 吴振玉   

  1. 安徽大学化学化工学院, 安徽省绿色高分子材料重点实验室, 合肥 230039
  • 收稿日期:2005-01-04 出版日期:2006-01-10 发布日期:2006-01-10
  • 通讯作者: 徐洪耀(1964年出生), 男, 博士, 教授, 博士生导师, 从事新型光电功能材料研究. E-mail: xuhongy@mail.hf.ah.cn
  • 基金资助:

     国家自然科学基金(批准号: 90206014, 50472038)、 教育部“新世纪优秀人才支持计划”(批准号: NCET-04-0588)、 安微省优秀青年基金(批准号: 04044060)和安微省高层次优秀人才研究奖励基金(批准号: 2004Z027

Preparation and Forming Mechanism of Porous Film with
Low Dielectric Constant


XU Hong-Yao, WANG Xian-Biao, WU Zhen-Yu   

  1. The Key Laboratory of Environmentfriendly Polymer Materials of Anhui Province, Faculty of Chemistry
    and Chemical Engineering, Anhui University, Hefei 230039, China
  • Received:2005-01-04 Online:2006-01-10 Published:2006-01-10
  • Contact: XU Hong-Yao,E-mail: xuhongy@mail.hf.ah.cn

摘要:

摘要利用硅烷偶联剂KH-570(γ-甲基丙烯酰氧基甲氧基硅烷)水解缩合生成的多面低聚倍半硅氧烷(POSS)溶胶为模板剂, 经热解制备低介电多孔薄膜材料. 使用FTIR对材料制备过程及形成机制进行动态研究, 通过 29Si NMR、 椭偏仪、 氮气吸脱附曲线和TEM等对材料的介电性质、 孔洞大小和分布情况进行表征. 制备的介电多孔薄膜材料孔洞分布均匀、 孔径约1 nm, 比表面积为384.1 m2/g, 介电常数为2.5的低.

关键词: 多孔薄膜; 低介电常数; 旋转涂布

Abstract:

AbstractPOSS sol-gel as the porous silica template was prepared by hydrolyzation and condensation of KH-570(γ-methacryloxypropyltrimethoxy silane). Porous film with a low dielectric constant was obtained by calcination of POSS template. The process and mechanism of film formation were investigated by FTIR and its structure was characterized by 29Si NMR, Ellipsometr, N2 adsorptiondesorption and TEM. The results show that the film possesses uniform pore with about 1 nm size, dielectric constant 2.5, and Sbet=384.1 m2/g and the effects of the surface modification reagent and it′s concentration on the dielectric property of film were discussed.

Key words: POSS; Porous film; Low dielectric constant; Rotary coating

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