高等学校化学学报 ›› 2004, Vol. 25 ›› Issue (12): 2345.

• 研究论文 • 上一篇    下一篇

C77Si电子结构和光谱的量子化学研究

滕启文, 吴师   

  1. 浙江大学化学系, 杭州310027
  • 收稿日期:2003-12-11 出版日期:2004-12-24 发布日期:2004-12-24

Quantum Chemistry Studies on Electronic Structures and Spectra of C77Si

TENG Qi-Wen, WU Shi   

  1. Department of Chemistry, Zhejiang University, Hangzhou 310027, China
  • Received:2003-12-11 Online:2004-12-24 Published:2004-12-24

摘要: 用INDO系列方法对C77Si的21种可能异构体进行了理论研究,表明最稳定异构体是由C78(C2v)椭球长轴所穿过的六元环上原子C35被Si取代所形成的,椭球短轴附近的原子不宜被取代;C77Si光谱吸收峰与C78相比发生红移,讨论了吸收峰红移的原因.

关键词: C77Si, 电子光谱, INDO

Abstract: All of the possible 21 isomers for C77Si, an isoelectronic molecule of C78, were investigated by INDO methods based on C78(C2v). It is indicated that the most stable isomer is one in which the silicon atom locates at the hexagon C35 passing through by the x longest axis, whereas the atoms locating at the bond C1_C2 passing by the z shortest axis are difficult to substitute, and the substitution of the silicon atom makes the cage distort. The red-shift of absorption peaks of electronic spectra for C77Si isomers will take place compared with that of C78(C2v) which is because of their narrower LUMO-HOMO energy gaps and there is a great difference in the characteristic absorptions between C77Si35 and other isomers, which can be considered as an evidence for the formation of C77Si35.

Key words: C77Si, Electronic spectrum, INDO

中图分类号: 

TrendMD: