高等学校化学学报

高等学校化学学报 ›› 2003, Vol. 24 ›› Issue (7): 1262.

• 论文 • 上一篇    下一篇

衬底温度对强流脉冲离子束烧蚀沉积类金刚石薄膜化学结构的影响

梅显秀, 马腾才   

  1. 大连理工大学三束材料改性国家重点实验室, 大连 116024
  • 收稿日期:2002-07-16 出版日期:2003-07-24 发布日期:2003-07-24
  • 通讯作者: 梅显秀(1968年出生),女,博士研究生,主要从事材料表面改性及功能薄膜沉积研究.E-mail:meili@dlut.edu.cn E-mail:meili@dlut.edu.cn
  • 基金资助:

    国家自然科学重点基金(批准号:19835030)资助

Effects of Substrate Temperature on the Chemical Structure of Diamond-like Carbon Films Deposited by High-intensity Pulsed Ion Beam Ablation

MEI Xian-Xiu, MA Teng-Cai   

  1. State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024, China
  • Received:2002-07-16 Online:2003-07-24 Published:2003-07-24
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被引次数

9

摘要： 采用强流脉冲离子束(High-intensitypulsedionbeam,HIPIB)烧蚀技术在Si(100)基体上沉积类金刚石(Diamond-likecarbon,DLC)薄膜,衬底温度的变化范围为298～673K.利用Raman光谱和X射线光电子谱(XPS)对DLC薄膜的化学结合状态与衬底温度之间关系进行研究.薄膜XPS的C1s谱的解谱分析得出薄膜中含有sp3C(结合能为285.5eV)和sp2C(结合能为284.7eV)成分,根据解谱结果评价薄膜中sp3C含量.根据XPS分析可知,衬底温度低于473K时,sp3C的含量大约为40%左右;随着沉积薄膜时衬底温度的提高,sp3C的含量降低,由298K时的42.5%降到673K时的8.1%,从573K开始发生sp3C向sp2C转变.Raman光谱表明,随着衬底温度的提高,Raman谱中G峰的峰位靠近石墨峰位,G峰的半峰宽降低,D峰与G峰的强度比ID/IG增大,说明薄膜中的sp3C的含量随衬底温度增加而减少.

关键词: DLC薄膜, 强流脉冲离子束烧蚀, 化学结合状态

Abstract: Diamond-like carbon(DLC) films have been deposited on the silicon(Si) substrate at different substrate temperatures by using high-intensity pulsed-ion-beam(HIPIB) ablation with graphite as the targets. Raman and XPS spectroscopies were used to study the relationship between the chemical binding state of DLC thin films and substrate temperature. The analysis result of the XPS of the C1s core level of DLC thin films obtained at different substrate temperatures was presented. These spectra are deconvoluted into different contributions at 285.5 and 284.7 eV, which are respectively attributed to sp3 and sp2 hybridized carbon atoms. XPS spectra show when the substrate temperature is lower then 573 K, the content of sp3 carbon in the films is about 40%; when the substrate temperature is increased, the content of sp3 carbon in the films decrease; when the substrate temperature is 573 K, the transition from sp3C to sp2C occurre. Raman spectrum shows that with the increase of substrate temperatures, the G peak position shifted to the peak position of graphite the full width at half-maximum decreased from 176 to 122cm-1 and the ratio of ID/IG increased from 1.56 to 3.62. The content of sp3 carbon in the films may be related with the G peak position, the full width at half-maximum of G peak and the ratio ID/IG.

Key words: Diamond-like carbon films, High-intensity pulsed-ion-beam ablation(HIPIBA), Chemical binding state

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