高等学校化学学报

高等学校化学学报 ›› 2003, Vol. 24 ›› Issue (5): 880.

• 论文 • 上一篇    下一篇

轰击离子能量对CNx薄膜中sp3型C-N键含量的影响

李俊杰1,3, 曹培江1, 郑伟涛2, 吕宪义1, 卞海蛟2, 金曾孙1   

  1. 1. 吉林大学超硬材料国家重点实验室;
    2. 吉林大学材料科学与工程学院, 长春 130023;
    3. 延边大学理工学院, 延吉 133002
  • 收稿日期:2002-01-25 出版日期:2003-05-24 发布日期:2003-05-24
  • 通讯作者: 金曾孙(1941年出生),男,教授,博士生导师,从事超硬材料与多功能薄膜材料研究.
  • 基金资助:

    教育部优秀中青年项目;吉林省科学技术委员会计划发展基金项目(批准号:980544)资助

Influence of Bombarding Ions Energy on the Content of sp3C-N Bonds in Carbon Nitride Films

LI Jun-Jie1,3, CAO Pei-Jiang1, ZHENG Wei-Tao2, LU Xian-Yi1, BIAN Hai-Jiao2, JIN Zeng-Sun1   

  1. 1. National Key Laboratory of Superhard Materials;
    2. College of Materials Science and Engineering, Jilin University, Changchun 130023, China;
    3. College of Science and Engineering, Yanbian University, Yanji 133002, China
  • Received:2002-01-25 Online:2003-05-24 Published:2003-05-24

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摘要： 对磁控溅射生长在单晶Si(001)衬底上的CNx薄膜样品的化学键合及结构进行了研究,利用不同的衬底负偏压(Vh)来控制轰击衬底表面的入射离子能量,从而影响膜中的化学键合的状态.样品的FTIR,Ra-man和XPS分析结果表明,CNx薄膜中N原子分别与sp,sp2和sp3杂化状态的C原子结合,其中sp3型C-N键含量先随着衬底偏压(Vb)的升高而增加,并在偏压Vb=-50V时达到最大值,但随着Vb继续升高,sp3型C-N键含量减少,这表明CNx薄膜中,sp3型C-N键的含量与轰击离子的能量变化密切相关.

关键词: CNx薄膜, 化学键合, sp3C-N键

Abstract: The chemical bonding states and the structure of CNxfilms grown on Si(001) substrate by using RFmagnetron sputtering were studied at different substrate bias voltages (Vb) The incident ions energy bombarding the substrate surface could be controlled by the substrate negative bias, which would influence the chemical bonding states of CNxfilms. The results of Raman, FTIR and XPS showed that the nitrogen atoms were bound to sp, sp2and sp3hybridized carbon atoms. The content of sp3C-N increased firstly with the increase of Vb, reached to the maximum value at Vb=- 50 V, and then decreased continually. This trend indicated the content of sp3C-N bonds in the CNxfilms were closely related to change of ions energy.

Key words: CNxfilms, Chemical bonding state, sp3C-N bond

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