高等学校化学学报

高等学校化学学报 ›› 2002, Vol. 23 ›› Issue (2): 275.

• 研究论文 • 上一篇    下一篇

射频磁控溅射CNx薄膜的结构与衬底温度关系的研究

曹培江1, 姜志刚1, 李俊杰1, 金曾孙1, 王欣2, 郑伟涛2, 李哲奎3   

  1. 1. 吉林大学超硬材料国家重点实验室, 长春 130023;
    2. 吉林大学材料科学系, 长春 130023;
    3. 延边大学理工学院物理系, 延边 133002
  • 收稿日期:2000-11-20 出版日期:2002-02-24 发布日期:2002-02-24
  • 通讯作者: 金曾孙(1941年出生),男,教授,博士生导师,从事超硬材料与多功能薄膜材料研究.
  • 基金资助:

    教育部优秀中青年项目;吉林省科学技术委员会计划发展基金(批准号:980544)资助

Studies on the Relationship Between Substrate Temperature and Structure of CNx Thin Films Deposited by R.F. Magnetron Sputtering

CAO Pei-Jiang1, JIANG Zhi-Gang1, LI Jun-Jie1, JIN Zeng-Sun1, WANG Xin2, ZHENG Wei-Tao2, LI Zhe-Kui3   

  1. 1. National Laboratory of Superhard Materials, Jilin University, Changchun 130023, China;
    2. Department of Materials Science, Jilin University, Changchun 130023, China;
    3. Department of Physics, Collegeof Scienceand Technology, Yanbian University, Yanbian 133002, China
  • Received:2000-11-20 Online:2002-02-24 Published:2002-02-24

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摘要： 使用射频磁控溅射方法在不同衬底温度下(ts=室温,350,500℃)于Si(001)衬底上沉积了CNx膜,并利用拉曼(Raman)光谱、傅里叶变换红外光谱(FTIR)及X射线衍射光电子能谱(XPS)对CNx膜的化学结合状态与温度的关系进行了研究.Raman光谱结果表明,随衬底温度(ts)增加,D带向低频方向移动,G带向高频方向移动;它们的半高宽分别由375和150cm-1减小至328和142cm-1;ID/IG由3.76减小至2.88.FTIR谱中除无序D带(1400cm-1)和石墨G带(1570cm-1)外,还有～700cm-1,～2210cm-1(C≡N),2330cm-1(C—O)及3255～3351cm-1(N—H)等峰.XPS测试结果表明:随衬底温度增加,N与C的物质的量比由0.49下降至0.38,sp2(C—N)组分与sp3(C—N)组分强度比呈增大趋势.低温(350℃)退火并未对CNx膜的化学结合状态产生较大影响;高温(900℃)退火样品则显示出较好的结晶化程度.

关键词: CNx, 射频磁控溅射, 化学结合状态

Abstract: CNx thin films were synthesized on Si(001) at different substrate temperatures(ts=room temperature, 350, 500 ℃) by R.F. magnetron sputtering method, Raman spectroscopy, FTIR spectroscopy and XPSwere used to study the relationship between the chemical binding state of CNx thin films and temperature. Raman spectra shows that with the increase of ts, Db and position shifted towards a lower frequency, while Gband position shifted towards a higher frequency. Their full width at half-maximum decreased from 375 and 150 cm-1 to 328 and 142 cm-1 respectively, and the ratio of ID/IG decreased from 376 to 288 too. Except for disorder Dband(1400 cm-1) and graphitic Gband(1570 cm-1), ca . 700, ca . 2210(C≡N), 2330(C-O) and 3255-3351 cm-1 (N-H) appeared in FTIRspectra. From XPS spectra we can conclude that with the rise of t s, mol ratio of N/Cdecreased from 049 to 038, while the compound ratio of sp2(C-N) to sp3(C-N) had a trend of increasing. Lower annealing temperature(350 ℃) had no significant effects on the chemical binding state of CNx thin film, but higher annealing temperature(900 ℃) led to the better crystallization degree of the sample.

Key words: CNx, R.F.magnetron sputtering, Chemical binding state

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