高等学校化学学报

高等学校化学学报 ›› 2001, Vol. 22 ›› Issue (7): 1222.

• 研究快报 • 上一篇    下一篇

STM热化学烧孔方式的信息存储——写入脉冲幅值和脉宽对信息点尺寸的影响

雷晓钧, 陈海峰, 刘忠范   

  1. 北京大学化学与分子工程学院, 北京大学纳米科学技术中心, 北京 100871
  • 收稿日期:2001-01-18 出版日期:2001-07-24 发布日期:2001-07-24
  • 通讯作者: 刘忠范(1962年出生),男,博士,教授,博士生导师,从事纳米化学研究.
  • 基金资助:

    国家自然科学基金重大项目(批准号:6989022);国家自然科学基金(批准号:29973001);国家杰出青年科学基金(批准号:59425006

STM Thermochemical Hole Burning Memory——Influence of Pulse Voltage and Duration on Hole Size

LEI Xiao-Jun, CHEN Hai-Feng, LIU Zhong-Fan    

  1. College of Chemistry and Molecular Engineering, Center for Nanoscale Science and Technology, Peking University, Beijing 100871, China
  • Received:2001-01-18 Online:2001-07-24 Published:2001-07-24

PDF (PC)

关键词: STM, 信息存储, 热化学成孔, THB

Abstract: Recently we reported STM THB(Thermochemical Hole Burning) Data Storage. Here we study the influence of pulse voltage and duration on hole size. It is demonstrated that with the increase of pulse voltage and duration, the hole size increases correspondingly. Furthermore, theoretical analysis was conducted, which was successfully used to interpret our experimental results.

Key words: STM, Data storage, Thermochemical Hole Burning, THB

中图分类号: 

TrendMD: