高等学校化学学报

高等学校化学学报 ›› 1995, Vol. 16 ›› Issue (S1): 67.

• 研究论文 • 上一篇    下一篇

Step Morphology of Liquid Phase Epitaxial GaAs Determined by Atomic Force Microscopy

LU Yin-cheng, CHEN Yong, CAI Sheng-min, LIU Zhong-fan   

  1. Electrophotonic Intelligent Materials Laboratory, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
  • 收稿日期:1995-08-20 出版日期:1995-12-31 发布日期:1995-12-31
  • 基金资助:

    National Natural Science Foundation of China

Step Morphology of Liquid Phase Epitaxial GaAs Determined by Atomic Force Microscopy

LU Yin-cheng, CHEN Yong, CAI Sheng-min, LIU Zhong-fan   

  1. Electrophotonic Intelligent Materials Laboratory, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
  • Received:1995-08-20 Online:1995-12-31 Published:1995-12-31
  • Supported by:

    National Natural Science Foundation of China

PDF (PC)

摘要：

Single, double and triple growth spirals were observed on liquid phase epitaxy(LPE) grown layers using atomic force microscopy (AFM). Spiral growth arises from the motion of growth steps in a spiral fashion. The LPE grown GaAs Layers show quite a different step morphology as compared with cleaved GaAs crystals. The step treads are atomically flat planes in the cleaved crystals. but are generally not atomically flat planes and rather bow upwards in the LPE layers. The mechanism arousing this difference is unclear.

关键词: Liquid phase epitaxy, GaAs step morphology, Atomic force microscopy

Abstract:

Single, double and triple growth spirals were observed on liquid phase epitaxy(LPE) grown layers using atomic force microscopy (AFM). Spiral growth arises from the motion of growth steps in a spiral fashion. The LPE grown GaAs Layers show quite a different step morphology as compared with cleaved GaAs crystals. The step treads are atomically flat planes in the cleaved crystals. but are generally not atomically flat planes and rather bow upwards in the LPE layers. The mechanism arousing this difference is unclear.

Key words: Liquid phase epitaxy, GaAs step morphology, Atomic force microscopy

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