高等学校化学学报 ›› 1995, Vol. 16 ›› Issue (S1): 193.

• 研究论文 • 上一篇    下一篇

Influence of Hydrogen and Oxygen on Porous Silicon Light Emission

Zhang S.L.1, Huang F.M.1, Jia L.2, Li J.J.2, Cai S.M.2   

  1. 1. Department of Physics, Peking University, Beijing, 100871, P. R. China;
    2. College of Chemistry and Molecule Engineering, Peking University, Beijing, 100871, also at the National Laboratory on Surface Physics, Fudan University, Shanghai, P. R. China
  • 收稿日期:1995-08-04 出版日期:1995-12-31 发布日期:1995-12-31
  • 基金资助:

    National Natural Science Foundation of China

Influence of Hydrogen and Oxygen on Porous Silicon Light Emission

Zhang S.L.1, Huang F.M.1, Jia L.2, Li J.J.2, Cai S.M.2   

  1. 1. Department of Physics, Peking University, Beijing, 100871, P. R. China;
    2. College of Chemistry and Molecule Engineering, Peking University, Beijing, 100871, also at the National Laboratory on Surface Physics, Fudan University, Shanghai, P. R. China
  • Received:1995-08-04 Online:1995-12-31 Published:1995-12-31
  • Supported by:

    National Natural Science Foundation of China

摘要:

The effect of oxygen and hydrogen on the photoluminescence intensity of porous silicon was examined. The results indicate that the presence of oxygen is necessary for visible light emission. In contrast, high hydrogen passivation is unfavorable for visible light emission.

关键词: Porous silicon, photoluminescence intensity, Hydrogen passivation

Abstract:

The effect of oxygen and hydrogen on the photoluminescence intensity of porous silicon was examined. The results indicate that the presence of oxygen is necessary for visible light emission. In contrast, high hydrogen passivation is unfavorable for visible light emission.

Key words: Porous silicon, photoluminescence intensity, Hydrogen passivation

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