高等学校化学学报 ›› 1995, Vol. 16 ›› Issue (S1): 167.
Zhang L.1, ZHU M.2, LIU Z.X.2, SHEN J.C.2, BAI Y.B.2, LI T.J.2, WEI C.3, SONG W.X.4
Zhang L.1, ZHU M.2, LIU Z.X.2, SHEN J.C.2, BAI Y.B.2, LI T.J.2, WEI C.3, SONG W.X.4
摘要:
The electrical and dielectric properties of metal-insulator-semiconductor(MIS) and metal-insulator-metal(MlM) structures of various LB films were investigated. High frequency capacitance-voltage (C-V)measurements of the MIS structures of the LB films showed the accumulation,depletion and inversion regions.The dielectric constants of various LB films were calculated. Contrast with other LB films, the microgel star-shaped amphiphile(MSA) LB film showed a potential application in electronic devices due to its higher thermal and mechanical stabilities. The breakdown voltage of the MIM structure of the MSA containing only a single monolayer is over 200 V.
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