高等学校化学学报 ›› 1995, Vol. 16 ›› Issue (S1): 167.

• 研究论文 • 上一篇    下一篇

Investigation of the Electrical and the Dielectric Properties of Various LB Films

Zhang L.1, ZHU M.2, LIU Z.X.2, SHEN J.C.2, BAI Y.B.2, LI T.J.2, WEI C.3, SONG W.X.4   

  1. 1. College of Chemical Engineering and Materials Science, Beijing Institute of Technology, Beijing, 100081, P. R. China;
    2. Jilin University, Changchun, 130023, P. R. China;
    3. Northeast Forestry University, Harbin, 150040, P. R. China;
    4. Automatic Department, Beijing Institute of Mechanical Industry Beijing, 100085, P. R. China
  • 收稿日期:1995-08-01 出版日期:1995-12-31 发布日期:1995-12-31
  • 基金资助:

    National Natural Science Foundation of China

Investigation of the Electrical and the Dielectric Properties of Various LB Films

Zhang L.1, ZHU M.2, LIU Z.X.2, SHEN J.C.2, BAI Y.B.2, LI T.J.2, WEI C.3, SONG W.X.4   

  1. 1. College of Chemical Engineering and Materials Science, Beijing Institute of Technology, Beijing, 100081, P. R. China;
    2. Jilin University, Changchun, 130023, P. R. China;
    3. Northeast Forestry University, Harbin, 150040, P. R. China;
    4. Automatic Department, Beijing Institute of Mechanical Industry Beijing, 100085, P. R. China
  • Received:1995-08-01 Online:1995-12-31 Published:1995-12-31
  • Supported by:

    National Natural Science Foundation of China

摘要:

The electrical and dielectric properties of metal-insulator-semiconductor(MIS) and metal-insulator-metal(MlM) structures of various LB films were investigated. High frequency capacitance-voltage (C-V)measurements of the MIS structures of the LB films showed the accumulation,depletion and inversion regions.The dielectric constants of various LB films were calculated. Contrast with other LB films, the microgel star-shaped amphiphile(MSA) LB film showed a potential application in electronic devices due to its higher thermal and mechanical stabilities. The breakdown voltage of the MIM structure of the MSA containing only a single monolayer is over 200 V.

关键词: LB films, MIS and MIM structure, Electrical and dielectric properties

Abstract:

The electrical and dielectric properties of metal-insulator-semiconductor(MIS) and metal-insulator-metal(MlM) structures of various LB films were investigated. High frequency capacitance-voltage (C-V)measurements of the MIS structures of the LB films showed the accumulation,depletion and inversion regions.The dielectric constants of various LB films were calculated. Contrast with other LB films, the microgel star-shaped amphiphile(MSA) LB film showed a potential application in electronic devices due to its higher thermal and mechanical stabilities. The breakdown voltage of the MIM structure of the MSA containing only a single monolayer is over 200 V.

Key words: LB films, MIS and MIM structure, Electrical and dielectric properties

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