高等学校化学学报

高等学校化学学报 ›› 1995, Vol. 16 ›› Issue (S1): 149.

• 研究论文 • 上一篇    下一篇

Atomic Force Microscopic Studies of Light-Emitting Porous Silicon

LIU Z.F.1, CHEN Y.1, LI J.J.2, ZHANG S.L.1   

  1. 1. Electrophotonic Intelligent Materials Laboratory, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China;
    2. Department of Physics, Peking University, 100871, P. R. China
  • 收稿日期:1995-10-05 出版日期:1995-12-31 发布日期:1995-12-31
  • 基金资助:

    National Natural Science Foundation of China and Xiaman State Key Lab. of Phy. Chem. of the Solid Surface

Atomic Force Microscopic Studies of Light-Emitting Porous Silicon

LIU Z.F.1, CHEN Y.1, LI J.J.2, ZHANG S.L.1   

  1. 1. Electrophotonic Intelligent Materials Laboratory, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China;
    2. Department of Physics, Peking University, 100871, P. R. China
  • Received:1995-10-05 Online:1995-12-31 Published:1995-12-31
  • Supported by:

    National Natural Science Foundation of China and Xiaman State Key Lab. of Phy. Chem. of the Solid Surface

PDF (PC)

被引次数

1

摘要：

The surface morphologies of porous silicon (PS), fabricated under various anodic etching conditions and on different typvs of silicon substrates, were studied using atomic force microscopy (AFM). The typical sizes of silicon crystallites of PS were found to be 4-10 nanome-ters,an expected for quantum confinement effect. The results suggested the doping concentration of silicon substrate plays an important role compared with the doping type in determining the surface microstructures. On p- PS samples, a step-like dependence of the PS crystallite size of HF etching concentration was observed for the first time,in nice agreement with the,tep-like photo-luminescence (PL) phenomenon. which strongly supported the quantum confinement model.

关键词: Surface morphologies of porous silicon, Step-like phenomenon, Quantum confinement

Abstract:

The surface morphologies of porous silicon (PS), fabricated under various anodic etching conditions and on different typvs of silicon substrates, were studied using atomic force microscopy (AFM). The typical sizes of silicon crystallites of PS were found to be 4-10 nanome-ters,an expected for quantum confinement effect. The results suggested the doping concentration of silicon substrate plays an important role compared with the doping type in determining the surface microstructures. On p- PS samples, a step-like dependence of the PS crystallite size of HF etching concentration was observed for the first time,in nice agreement with the,tep-like photo-luminescence (PL) phenomenon. which strongly supported the quantum confinement model.

Key words: Surface morphologies of porous silicon, Step-like phenomenon, Quantum confinement

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