高等学校化学学报

高等学校化学学报 ›› 1994, Vol. 15 ›› Issue (10): 1543.

• 论文 • 上一篇    下一篇

红外激光诱导SiO2薄膜生长的氧化动力学研究

徐铸德, 陈万喜, 丁继成   

  1. 浙江大学化学系, 杭州, 310027
  • 收稿日期:1993-12-23 修回日期:1994-05-19 出版日期:1994-10-24 发布日期:1994-10-24
  • 通讯作者: 徐铸德,男,49岁,博士,副教授.
  • 作者简介:徐铸德,男,49岁,博士,副教授.
  • 基金资助:

    国家自然科学基金

Experimental Study of Oxidation Dynamics of IR Laser-Induced SiO2 Films

XU Zhu-De, CHEN Wan-Xi, DING Ji-Cheng   

  1. Department of Chemistry, Zhejiang University, Hangzhou, 310027
  • Received:1993-12-23 Revised:1994-05-19 Online:1994-10-24 Published:1994-10-24

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摘要： 在较低基底温度(室温至～200℃)下,用10.6μmCWCO2激光在硅(100)表面生成SiO2薄膜,研究了反应气配比(O2/N2)、基底温度、激光强度、激光辐照时间等实验条件对SiO2薄膜形成的影响,探讨了红外激光助长的硅表面氧化反应动力学过程,认为在薄层氧化区域(<30nm)存在反应诱导期。

关键词: 激光微化学, SiO2薄膜, 氧化动力学

Abstract: IRlaser-assisted SiO2 thin films were grown on the clean surface of Si(100)at a low substrate temperature(from room temperature to about 200℃), using 10.6 μm CW CO2 laser by self-established laser surface reaction device, The influence of different experimental conditions, such as reaction gas percentage, substrate temperature, incident laser intensity, and laser exposure time etc.on SiO2 thin films was investigated.The reaction dynamics of oxidation of IRlaser-assisted SiO2 films was discussed and the idea of reaction inducement period in the thin oxidation area(<30 nm)was suggested.

Key words: Laser micro-chemistry, SiO2 film, Oxidation dynamics

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