p型Se的电沉积及其转化为n型CdSe的机理研究

高等学校化学学报 ›› 1993, Vol. 14 ›› Issue (8): 1118.

p型Se的电沉积及其转化为n型CdSe的机理研究

刘东, 吴辉煌, 张瀛洲, 周绍民

厦门大学化学系, 固体表面物理化学国家重点实验室, 厦门 361005

收稿日期:1992-08-25 修回日期:1993-06-18 出版日期:1993-08-24 发布日期:1993-08-24
通讯作者: 吴辉煌
作者简介:第一作者:男, 30岁, 博士.
基金资助:
国家自然科学基金

Studies on the Mechanism of p-Se Electrodeposition and Its Conversion to n-CdSe

LIU Dong, WU Hui-Huang, ZHANG Ying-Zhou, ZHOU Shao-Min

Department of Chemistry, State Key laboratory for Physical Chemistry of Solid Surfaces, Xiamen University, Xiamen, 361005

Received:1992-08-25 Revised:1993-06-18 Online:1993-08-24 Published:1993-08-24

摘要/Abstract

摘要： 利用线性电位扫描光伏安法等技术研究钛基体上Se半导体薄膜的电化学形成及转化过程.实验结果表明,在H₂SeO₃溶液中进行电沉积可获得p型Se薄膜,它可在酸性CdSO₄溶液中阴极转化为n型CdSe.讨论了Se的电沉积动力学及其转化为CdSe的可能机理.所述原理可望用于p-n异质结的电化学制备.

关键词: 半导体电沉积, p型Se, n型CdSe, 线性电位扫描光伏安法

Abstract: The electrochemical formation of Se semiconductor thin-film on Ti substrate and its conversion to CdSe were studied by linear potential sweep photovoltammetry etc.The results show that p-Se thin film can be obtained by electrodepositing in H₂SeO₃ solution and the film can further transformed into n-CdSe in acidic CdSO₄ solution cathodically.The kinetics of Se elec-trodeposition was analyzed and the possible mechanism of conversion to n-CdSe was proposed.The principle was suggested to be used for preparation of p-n semiconductor heterojunction.

Key words: Semiconductor electrodeposition, p type Se, n type CdSe, Linear potential sweep photovoltammetry

TrendMD:

刘东, 吴辉煌, 张瀛洲, 周绍民. p型Se的电沉积及其转化为n型CdSe的机理研究. 高等学校化学学报, 1993, 14(8): 1118.

LIU Dong, WU Hui-Huang, ZHANG Ying-Zhou, ZHOU Shao-Min. Studies on the Mechanism of p-Se Electrodeposition and Its Conversion to n-CdSe. Chem. J. Chinese Universities, 1993, 14(8): 1118.