气相外延氮化镓掺杂生长的研究

高等学校化学学报 ›› 1980, Vol. 1 ›› Issue (2): 99.

气相外延氮化镓掺杂生长的研究

孟广耀, 彭定坤, 胡克鳌, 楼吉人, 席兰芝, 韩星

中国科学技术大学化学系

收稿日期:1980-02-12 出版日期:1980-12-24 发布日期:1980-12-24

THE INVESTIGATION ON THE GAS PHASE DOPING EPITAXIAL GROWTH OF GaN

Meng Guangyao, Peng Dingkun, Hu Keao, Lou Jiren, Xi Lanzhi, Han Xing

Department of Chemistry, The China University of Science and Technology

Received:1980-02-12 Online:1980-12-24 Published:1980-12-24

摘要/Abstract

摘要： 本文报导了用Ga-HCl-NH₃-H₂-Ar系统进行GaN掺杂生长的研究。实验结果指出:锌向外延层的并入和生长层的表面形貌显著地受各淀积参数特别是淀积温度的影响。发现存在一个狭窄的温度范围(我们实验条件下,970-1000℃),在该温度范围内,锌骤然并入生长层,且生长层具有良好的表面。此外,还进行了锌和磷双掺杂的初步探索试验,结果表明有必要对其进一步开展研究。生长层中杂质的深度分布的分析发现磷和锌的掺入行为不同。根据实验事实,讨论了锌掺杂和晶体生长过程的机理并提出了一个掺杂生长的合理程序。

Abstract: This paper deals with the investigation of the doping growth of GaNby using Ga-HCl-NH₃-H₂-Ar system.The experimental results indicate that the incorporation of Zinc into epitaxial layers and the morphology of the layers are significantly effected by each of deposition parameters,especially by the deposition temperature.It was found that there is a narrow range of temperature (ca.970-1000℃) in which Zinc incorporates abruptly into the epitaxial layers and the layers grown have better quality.In addition an initial test of doping growth with both Zinc and phosphorus as dopants was carried out.The result suggests the value of further rese-(re-search) search on it.The measurement of the impurity distributions in the depth of the layers grown showed the difference in the incorporation behaviours of Zinc and phosphorus.On the basis of these experimental facts the mechanisms of Zinc-doping and crystal growth processes are presented and a desirable procedure for doping epitaxial growth is suggested.

TrendMD:

孟广耀, 彭定坤, 胡克鳌, 楼吉人, 席兰芝, 韩星. 气相外延氮化镓掺杂生长的研究. 高等学校化学学报, 1980, 1(2): 99.

Meng Guangyao, Peng Dingkun, Hu Keao, Lou Jiren, Xi Lanzhi, Han Xing. THE INVESTIGATION ON THE GAS PHASE DOPING EPITAXIAL GROWTH OF GaN. Chem. J. Chinese Universities, 1980, 1(2): 99.