高等学校化学学报

高等学校化学学报 ›› 2012, Vol. 33 ›› Issue (04): 768.doi: 10.3969/j.issn.0251-0790.2012.04.022

• 物理化学 • 上一篇    下一篇

ZnO/Cu2O异质结中深能级表面光伏特性

王蓉1, 史占花1, 蔡芳共1, 杨峰1, 贾永芳1, 黎颖1, 程翠华1,2, 赵勇1,2   

  1. 1. 西南交通大学超导与新能源研究开发中心, 材料先进技术教育部重点实验室, 成都 610031;
    2. 新南威尔士大学材料科学与工程学院, 悉尼 2052
  • 收稿日期:2011-10-11 出版日期:2012-04-10 发布日期:2012-04-10
  • 作者简介:杨峰, 男, 博士, 助理研究员, 主要从事新能源材料研究. E-mail: yf@home.swjtu.edu.cn;赵勇, 男, 博士, 教授, 主要从事超导和新能源材料研究. E-mail: yzhao@home.swjtu.edu.cn
  • 基金资助:

    国家自然科学基金(批准号: 50872116)、教育部超导磁悬浮列车创新团队项目(批准号: IRT0751)、教育部博士点基金(批准号: SRDP200806130023)和中央高校基本科研业务费专项资金(批准号: 2009QK46, SWJTU09ZT24)资助.

Surface Photovoltage Properties of Deep Level in ZnO/Cu2O Heterojunction Films

WANG Rong1, SHI Zhan-Hua1, CAI Fang-Gong1, YANG Feng1, JIA Yong-Fang1, LI Ying1, CHENG Cui-Hua1,2, ZHAO Yong1,2   

  1. 1. Superconductivity and New Energy R & D Center(SRDC), Key Laboratory of Advanced Technology of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu 610031, China;
    2. School of Materials Science and Engineering, University of New South Wales, Sydney 2052, Australia
  • Received:2011-10-11 Online:2012-04-10 Published:2012-04-10
  • Supported by:

    国家自然科学基金(批准号: 50872116)、教育部超导磁悬浮列车创新团队项目(批准号: IRT0751)、教育部博士点基金(批准号: SRDP200806130023)和中央高校基本科研业务费专项资金(批准号: 2009QK46, SWJTU09ZT24)资助.

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摘要： 采用恒电压沉积法在导电玻璃(FTO)上制备了具有三棱柱金字塔状的ZnO/Cu2O异质结薄膜. 利用场发射扫描电镜(FESEM)与X射线衍射仪(XRD)对薄膜的微观形貌和晶体结构进行了表征. 利用表面光电压谱(SPS)、场诱导表面光电压谱(FISPS)和相位谱(PS)研究了单一Cu2O与ZnO/Cu2O异质结薄膜的表面光伏性质. 结果表明, 与单一Cu2O薄膜相比, ZnO/Cu2O异质结薄膜的光伏响应范围拓展到了600~800 nm. 根据SPS, FISPS和PS的作用原理, 拓展部分的光伏响应归因于ZnO/Cu2O异质结中Cu2O层的深能级跃迁, 该跃迁在ZnO-Cu2O界面电场(方向由ZnO指向Cu2O)的作用下得到加强, 同时深能级跃迁产生的电子-空穴对在ZnO-Cu2O界面电场的作用下得到了有效分离和传输.

关键词: ZnO/Cu2O异质结, 表面光电压谱, 场诱导表面光电压谱, 界面电场

Abstract: ZnO/Cu2O heterojunction films with triangular pyramid surface morphology were electrodeposited potentiostatically on the FTO. The morphology and crystalline phase of obtained films were characterized by field emission scanning electron microscopy(FESEM) and X-ray diffraction(XRD). The surface photovoltage properties of Cu2O and ZnO/Cu2O heterojunction films were investigated through surface photovoltage spectrum(SPS), field-induced surface photovoltage spectrum(FISPS) and phase spectrum(PS). The results show that compared to Cu2O films, the surface photovoltage response of the ZnO/Cu2O heterojunction films are extended to 600—800 nm. According to the principle of SPS, FISPS and PS, the extended photovoltage response is ascribed to the transition of deep level in Cu2O which is enhanced by the interfacial electric field between ZnO and Cu2O in the direction from ZnO to Cu2O. The photoinduced electron-hole pair germinates from deep level transition of Cu2O in ZnO/Cu2O heterojunction films can disassociate and transmit efficiently by the aid of this strong interfacial electric field.

Key words: ZnO/Cu2O heterojunction, Surface photovoltage spectrum(SPS), Field induced surface photovoltage spectrum(FISPS), Interfacial electric field

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