Chem. J. Chinese Universities ›› 2003, Vol. 24 ›› Issue (7): 1262.
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MEI Xian-Xiu, MA Teng-Cai
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Abstract: Diamond-like carbon(DLC) films have been deposited on the silicon(Si) substrate at different substrate temperatures by using high-intensity pulsed-ion-beam(HIPIB) ablation with graphite as the targets. Raman and XPS spectroscopies were used to study the relationship between the chemical binding state of DLC thin films and substrate temperature. The analysis result of the XPS of the C1s core level of DLC thin films obtained at different substrate temperatures was presented. These spectra are deconvoluted into different contributions at 285.5 and 284.7 eV, which are respectively attributed to sp3 and sp2 hybridized carbon atoms. XPS spectra show when the substrate temperature is lower then 573 K, the content of sp3 carbon in the films is about 40%; when the substrate temperature is increased, the content of sp3 carbon in the films decrease; when the substrate temperature is 573 K, the transition from sp3C to sp2C occurre. Raman spectrum shows that with the increase of substrate temperatures, the G peak position shifted to the peak position of graphite the full width at half-maximum decreased from 176 to 122cm-1 and the ratio of ID/IG increased from 1.56 to 3.62. The content of sp3 carbon in the films may be related with the G peak position, the full width at half-maximum of G peak and the ratio ID/IG.
Key words: Diamond-like carbon films, High-intensity pulsed-ion-beam ablation(HIPIBA), Chemical binding state
CLC Number:
O484.5
TrendMD:
MEI Xian-Xiu, MA Teng-Cai . Effects of Substrate Temperature on the Chemical Structure of Diamond-like Carbon Films Deposited by High-intensity Pulsed Ion Beam Ablation[J]. Chem. J. Chinese Universities, 2003, 24(7): 1262.
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http://www.cjcu.jlu.edu.cn/EN/Y2003/V24/I7/1262