Abstract: Diamond-like carbon(DLC) films have been deposited on the silicon(Si) substrate at different substrate temperatures by using high-intensity pulsed-ion-beam(HIPIB) ablation with graphite as the targets. Raman and XPS spectroscopies were used to study the relationship between the chemical binding state of DLC thin films and substrate temperature. The analysis result of the XPS of the C_1s core level of DLC thin films obtained at different substrate temperatures was presented. These spectra are deconvoluted into different contributions at 285.5 and 284.7 eV, which are respectively attributed to sp³ and sp² hybridized carbon atoms. XPS spectra show when the substrate temperature is lower then 573 K, the content of sp³ carbon in the films is about 40%; when the substrate temperature is increased, the content of sp³ carbon in the films decrease; when the substrate temperature is 573 K, the transition from sp³C to sp²C occurre. Raman spectrum shows that with the increase of substrate temperatures, the G peak position shifted to the peak position of graphite the full width at half-maximum decreased from 176 to 122cm^-1 and the ratio of I_D/I_G increased from 1.56 to 3.62. The content of sp³ carbon in the films may be related with the G peak position, the full width at half-maximum of G peak and the ratio I_D/I_G.

Key words: Diamond-like carbon films, High-intensity pulsed-ion-beam ablation(HIPIBA), Chemical binding state