Chem. J. Chinese Universities ›› 2016, Vol. 37 ›› Issue (3): 595.doi: 10.7503/cjcu20150705

• Polymer Chemistry • Previous Articles     Next Articles

Decay of Free Radicals in Polycarbosilane Induced by γ-Rays Irradiation

CHENG Yong1,2, LI Xiaohu1,2, LIU Weihua2, WU Guozhong2, WANG Mouhua2   

  1. 1. College of Sciences, Shanghai University, Shanghai 200444, China;
    2. Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800, China
  • Received:2015-09-10 Revised:2016-01-04 Online:2016-03-10 Published:2016-01-24
  • Supported by:

    Supported by the Strategic Priority Research Program of the Chinese Academy of Sciences(No.XDA02040300), the National Natural Science Foundation of China(No.11575279) and the Natural Science Foundation of Shanghai, China(No.15ZR1448600).

Abstract:

The formation and decay behavior of the free radicals trapped in polycarbosilane(PCS) induced by γ-rays irradiation in N2 were investigated by electron spin resonance(ESR). ESR analysis showed that the trapped radicals induced by γ-rays irradiation were assigned to Si radicals(≡Si·). The concentration of free radicals increased with absorbed dose linearly at the lower dose, and the G value of the radical formation was calculated to be 9. However, the concentration of free radicals tends to be saturated when the absorbed dose reached 200 kGy. Upon storage in N2 at ambient temperature the free radicals decayed slowly with a half-life of 23 d. On the contrary, the free radicals decayed rapidly after the sample was exposed to air due to their oxidation, the half-life was only 8 h. The rate of radical decay was accelerated by annealing at elevated temperature, the free radicals trapped in PCS could be removed thoroughly after heating up to 250℃ in N2.

Key words: Electron spin resonance(ESR), Polycarbosilane, γ-Rays irradiation, Free radical

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