Effects of Mo-dopant on Sintering Temperature and Grain Boundary Conductivity of High-purity Ce1-xNdxO2-x/2(x=0.10, 0.15) Systems

Chem. J. Chinese Universities

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Effects of Mo-dopant on Sintering Temperature and Grain Boundary Conductivity of High-purity Ce_1-xNd_xO_2-x/2(x=0.10, 0.15) Systems

ZHOU De-Feng^1*, ZHU Jian-Xin¹, XIA Yan-Jie¹, YU Dan¹, MENG Jian²

1. School of Biological Engineering, Changchun University of Technology, Changchun 130012, China;
2. Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China

Received:2007-12-23 Revised:1900-01-01 Online:2008-09-10 Published:2008-09-10
Contact: ZHOU De-Feng

Abstract

Abstract: The pure Ce_1-xNd_xO_2-x/2(x=0.10, 0.15) solid solutions were synthesized via citric-nitrate method and the effects of 5%(molar fraction) Mo-dopant on the sintering temperature and grain boundary conductivities of the Ce_1-xNd_xO_2-x/2(x=0.10, 0.15) were discussed. Their structures and ionic conductivities were characterized via X-ray Diffraction(XRD), Inductively Coupled Plasma(ICP), field-emission scanning electron microscopy(FE-SEM) and electrochemical impedance spectroscopy(EIS). The results show that the precurors synthesized via citric-nitrate method have a good sinterability with relative density of >96% after being sintered at 1450 ℃ for 24 h. With Mo-dopant, the relative density of >95% was reached after being sintered at 1250 ℃ for 8 h and the grain boundary conductivity increased greatly because of the increase of grain size. The grain boundary conductivty at 600 ℃ for Ce_0.85Nd_0.15O_1.925 increased from 2.56 S/m to 5.62 S/m with Mo-dopant.

Key words: Solid state electrolyte, Conductivity, Grain boundary, Doping

CLC Number:

O641
O614.33

TrendMD:

ZHOU De-Feng^1*, ZHU Jian-Xin¹, XIA Yan-Jie¹, YU Dan¹, MENG Jian². Effects of Mo-dopant on Sintering Temperature and Grain Boundary Conductivity of High-purity Ce_1-xNd_xO_2-x/2(x=0.10, 0.15) Systems[J]. Chem. J. Chinese Universities, doi: .

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Effects of Mo-dopant on Sintering Temperature and Grain Boundary Conductivity of High-purity Ce_1-xNd_xO_2-x/2(x=0.10, 0.15) Systems

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