Chem. J. Chinese Universities ›› 2004, Vol. 25 ›› Issue (8): 1400.

• Articles • Previous Articles     Next Articles

Long Phosphorescence Persistence Property of Cd2Ge7O16:Pb2+

YI Shou-Jun1,2, LIU Ying-Liang1, ZHANG Jing-Xian1, YUAN Ding-Sheng1   

  1. 1. Department of Chemistry, Jinan University, Guangzhou 510632, China;
    2. College of Chemistry and Chemical Engineering, Hunan University of Science and Technology, Xiangtan 411201, China
  • Received:2003-08-19 Online:2004-08-24 Published:2004-08-24

Abstract: Cd2Ge 7O16 :Pb2+ was prepared by the high temperature solid state method. The material is a single phase. From the emission spectra and excitation spectra of Cd2Ge7O16:Pb2+ and Cd 2Ge 7O 16,it can be seen that the luminescence of Cd2Ge7O16:Pb2+ is due to the 3 P 1- 1 S 0 transitions of Pb2+ ions, the peak at 497 nm of Cd2Ge7O16:Pb2+ doped with 2%Pb2+ in molar fraction is the best, and the host Cd2Ge7O16can transfer energy to Pb2+ . Long afterglow property of Cd2Ge7O16:Pb2+ is due to the hole trap of Cd2Ge7O16:Pb2+ and the hole trap can trap hole,so afterglow luminescence appears. A mode of afterglow mechanism was proposed.

Key words: Cd2Ge7O16, Luminescence, Long afterglow, Energy transfer

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