Self-assembled Alkylation of Atomically Flat Hydrogen-terminated Silicon (111) Surface By Using Highly Polarized Fluoroalkylsilane
LI Jing1,2, YE J. H.1, LI S. F. Y.2, CHAI J. W.1
1. Institute of Materials Research and Engineering, 3 Research Link, Singapore 117260, Republic of Singapore;
2. Department of Chemistry, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, Republic of Singapore
Online:2000-12-31
Published:2000-12-31
Contact:
YE J. H.
E-mail:jh-ye@imre.org.sg
Supported by:
The authors are grateful to the National Science and Technology Board (NSTB) of Singapore for the financial support (NSTB/172/2/1-12).
LI Jing, YE J. H., LI S. F. Y., CHAI J. W.. Self-assembled Alkylation of Atomically Flat Hydrogen-terminated Silicon (111) Surface By Using Highly Polarized Fluoroalkylsilane[J]. Chem. J. Chinese Universities, 2000, 21(S1): 223.