Step Morphology of Liquid Phase Epitaxial GaAs Determined by Atomic Force Microscopy

Chem. J. Chinese Universities ›› 1995, Vol. 16 ›› Issue (S1): 67.

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Step Morphology of Liquid Phase Epitaxial GaAs Determined by Atomic Force Microscopy

LU Yin-cheng, CHEN Yong, CAI Sheng-min, LIU Zhong-fan

Electrophotonic Intelligent Materials Laboratory, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China

Received:1995-08-20 Online:1995-12-31 Published:1995-12-31
Supported by:
National Natural Science Foundation of China

Abstract

Abstract:

Single, double and triple growth spirals were observed on liquid phase epitaxy(LPE) grown layers using atomic force microscopy (AFM). Spiral growth arises from the motion of growth steps in a spiral fashion. The LPE grown GaAs Layers show quite a different step morphology as compared with cleaved GaAs crystals. The step treads are atomically flat planes in the cleaved crystals. but are generally not atomically flat planes and rather bow upwards in the LPE layers. The mechanism arousing this difference is unclear.

Key words: Liquid phase epitaxy, GaAs step morphology, Atomic force microscopy

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LU Yin-cheng, CHEN Yong, CAI Sheng-min, LIU Zhong-fan. Step Morphology of Liquid Phase Epitaxial GaAs Determined by Atomic Force Microscopy[J]. Chem. J. Chinese Universities, 1995, 16(S1): 67.

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Step Morphology of Liquid Phase Epitaxial GaAs Determined by Atomic Force Microscopy

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