高等学校化学学报 ›› 2017, Vol. 38 ›› Issue (5): 896.doi: 10.7503/cjcu20160804

• 高分子化学 • 上一篇    下一篇

一种高感度深紫外正性化学增幅型抗蚀剂的制备

吴立萍, 胡凡华, 王倩倩, 王菁, 王力元   

  1. 北京师范大学化学学院, 北京 100875
  • 收稿日期:2016-11-18 修回日期:2017-04-11 出版日期:2017-05-10 发布日期:2017-04-11
  • 通讯作者: 王力元,男,博士,副教授,主要从事感光性高分子成像材料研究.E-mail:wly@bnu.edu.cn E-mail:wly@bnu.edu.cn
  • 基金资助:

    国家重点基础研究发展计划项目(批准号:2013CBA01703)和国家自然科学基金(批准号:51641301)资助.

Preparation of a Kind of Positive Chemically Amplified Deep UV Photoresist Material with High Sensitivity

WU Liping, HU Fanhua, WANG Qianqian, WANG Jing, WANG Liyuan   

  1. College of Chemistry, Beijing Normal University Beijing 100875, China
  • Received:2016-11-18 Revised:2017-04-11 Online:2017-05-10 Published:2017-04-11
  • Supported by:

    Supported by the National Basic Research Program of China(No.2013CBA01703) and the National Natural Science Foundation of China(No.51641301).

摘要:

聚对羟基苯乙烯和环己基乙烯基醚反应得到缩醛保护的聚合物.该聚合物易溶于常见的有机溶剂,具有较好的热稳定性,在248 nm处透明性良好.该聚合物可与聚对羟基苯乙烯-甲基丙烯酸金刚烷基酯及二砜光产酸剂等组成一种三组分正性化学增幅型深紫外光致抗蚀剂,初步研究了该抗蚀剂的感光成像性能.采用KrF激光(248 nm)曝光,在较低的后烘温度下,显影得到分辨率为180 nm的线条图形.显影后的留膜率在99%以上.在光致抗蚀剂体系中引入对羟基苯乙烯-金刚烷基甲基丙烯酸酯共聚物,可提高光刻胶材料的玻璃化转变温度,有利于其实际应用.

关键词: 光致抗蚀剂, 深紫外, 化学增幅, 聚对羟基苯乙烯, 缩醛

Abstract:

With the reaction of poly(4-hydroxystyrene)(PHS) and cyclohexyl vinyl ether(CVE), a partly protected product with acetal groups was prepared. The product PHS-CVE shows good solubilities in common photoresist solvents, high thermal stability and good transparency at 248 nm wavelength. A new kind of positive chemically amplified 248-nm photoresist can be formed by this polymer, disulfone PAG and copolymer of 4-hydroxy styrene and 3-hydroxy-1-adamantyl methacrylate. Lithographic performance was investigated via KrF laser exposure tool. A clear positive-tone pattern with 180 nm line width was obtained under low post exposure bake(PEB) temperature. Poly(4-hydroxy styrene-co-3-hydroxy-1-adamantyl methacrylate) incorporated to the resist can increase the glass transition temperature of the photoresist film, which makes the resist material applicable for 248-nm lithography process.

Key words: Photoresist, Deep ultraviolet, Chemical amplification, Poly(4-hydroxylstyrene), Acetal

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