高等学校化学学报

高等学校化学学报 ›› 2000, Vol. 21 ›› Issue (S1): 376.

• Chemistry in Surface Science • 上一篇    下一篇

ATR-FTIR Investigation of Hydrogen-terminated Si(111) Surface in Various NH4F-Based Solutions

LI Jing1,2, WANG Yi1,2, YE J.H.1, LI S.F.Y.2   

  1. 1. Institute of Materials Research and Engineering, 3 Research Link 3, Singapore 117602, Republic of Singapore;
    2. Department of Chemistry, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, Republic of Singapore
  • 出版日期:2000-12-31 发布日期:2000-12-31

ATR-FTIR Investigation of Hydrogen-terminated Si(111) Surface in Various NH4F-Based Solutions

LI Jing1,2, WANG Yi1,2, YE J.H.1, LI S.F.Y.2   

  1. 1. Institute of Materials Research and Engineering, 3 Research Link 3, Singapore 117602, Republic of Singapore;
    2. Department of Chemistry, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, Republic of Singapore
  • Online:2000-12-31 Published:2000-12-31

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摘要：

Wet chemical cleaning of silicon is a critical step in the semiconductor manufacturing. Particles, contaminants, metallic impurities, roughness and native oxide on silicon surface after wet chemical cleaning deteriorate the reliability of transistor performance in integrated circuits[1]. Wet chemical etching of Si(111) and Si(100) in fluoride and alkaline solutions has been extensively studied in the past few years by using scanning tunneling microscopy (STM) and attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR)[2-11]. In the present work, we extend our study to Si(111) surface after treating with NH4F/HCl mixtures. STM, X-ray photo spectroscopy (XPS), and ATR-FTIR are used to determine surface roughness, contamination and bond information on Si(111) surface after wet chemical cleaning with various NH4F/HCl mixtures. The results are discussed in details by comparison to those treated with RCA and HF solutions, indicating that ultra-clean and flat Si(111) surface is obtained by treatment with NH4F/HCl mixture.

Abstract:

Wet chemical cleaning of silicon is a critical step in the semiconductor manufacturing. Particles, contaminants, metallic impurities, roughness and native oxide on silicon surface after wet chemical cleaning deteriorate the reliability of transistor performance in integrated circuits[1]. Wet chemical etching of Si(111) and Si(100) in fluoride and alkaline solutions has been extensively studied in the past few years by using scanning tunneling microscopy (STM) and attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR)[2-11]. In the present work, we extend our study to Si(111) surface after treating with NH4F/HCl mixtures. STM, X-ray photo spectroscopy (XPS), and ATR-FTIR are used to determine surface roughness, contamination and bond information on Si(111) surface after wet chemical cleaning with various NH4F/HCl mixtures. The results are discussed in details by comparison to those treated with RCA and HF solutions, indicating that ultra-clean and flat Si(111) surface is obtained by treatment with NH4F/HCl mixture.

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