高等学校化学学报 ›› 2000, Vol. 21 ›› Issue (S1): 375.

• Chemistry in Surface Science • 上一篇    下一篇

ATR-FTIR Study of Si(110) Surface Hydrogenated in NH4F-Based Mixtures

WANG Yi1,2, LI Jing1,2, YE J.H.1, LI S.F.Y.2   

  1. 1. Institute of Materials Research and Engineering, 3 Research Link 3, Singapore 117602, Republic of Singapore;
    2. Department of Chemistry, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, Republic of Singapore
  • 出版日期:2000-12-31 发布日期:2000-12-31
  • 通讯作者: YE J.H. E-mail:jh-ye@imre.org.sg

ATR-FTIR Study of Si(110) Surface Hydrogenated in NH4F-Based Mixtures

WANG Yi1,2, LI Jing1,2, YE J.H.1, LI S.F.Y.2   

  1. 1. Institute of Materials Research and Engineering, 3 Research Link 3, Singapore 117602, Republic of Singapore;
    2. Department of Chemistry, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, Republic of Singapore
  • Online:2000-12-31 Published:2000-12-31
  • Contact: YE J.H. E-mail:jh-ye@imre.org.sg

摘要:

RCA (Radio Corporation of America) cleaning has been the important and critical step in semiconductor manufacturing for more than 30 years[1]. As the electronics devices are shrinking and gate oxide is getting thinner, stringent requirements on metallic impurities,organic contamination and surface roughness on silicon wafer after wet chemical cleaning have attracted more attention in the mechanism of wet etching processes on Si(111) and Si(100) surfaces[2=11]. In the past few years wet chemical and electrochemical etching of Si(110) in NH4F solutions has been studied by using scanning tunneling microscopy (STM)[12] and attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR)[13-14]. In the present work, we extend our study to Si(110) surface in NH4F/HCl mixtures by using polarized attenuated total reflection FTIR (ATR-FTIR). We have compared the ex-situ ATR-FTIR results on Si(110) in various NH4F/HCl solutions using Ge prism. Effects of potential on hydrogen-terminated structures on Si(110) surfaces have been investigated by employing in-situ electrochemical ATR-FTIR with double side polished single crystal silicon as a prism. Our ATR-FTIR spectra are correlated with the results obtained with in-situ STM.

Abstract:

RCA (Radio Corporation of America) cleaning has been the important and critical step in semiconductor manufacturing for more than 30 years[1]. As the electronics devices are shrinking and gate oxide is getting thinner, stringent requirements on metallic impurities,organic contamination and surface roughness on silicon wafer after wet chemical cleaning have attracted more attention in the mechanism of wet etching processes on Si(111) and Si(100) surfaces[2=11]. In the past few years wet chemical and electrochemical etching of Si(110) in NH4F solutions has been studied by using scanning tunneling microscopy (STM)[12] and attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR)[13-14]. In the present work, we extend our study to Si(110) surface in NH4F/HCl mixtures by using polarized attenuated total reflection FTIR (ATR-FTIR). We have compared the ex-situ ATR-FTIR results on Si(110) in various NH4F/HCl solutions using Ge prism. Effects of potential on hydrogen-terminated structures on Si(110) surfaces have been investigated by employing in-situ electrochemical ATR-FTIR with double side polished single crystal silicon as a prism. Our ATR-FTIR spectra are correlated with the results obtained with in-situ STM.

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