高等学校化学学报

高等学校化学学报 ›› 2000, Vol. 21 ›› Issue (S1): 305.

• Chemistry in Materials Sciences • 上一篇    下一篇

The Influence of Heat Treatment Mode on the Properties of Bi4Ti3O12 Thin Films by Chemical Solution Deposition Technique

XIAO Zhuo-Bing, CHEN Shang, YAO Jun, WU Zhu-Qing, WU Xian-Ming   

  1. Department of Chemistry, Jishou University, Jishou, Hunan
  • 出版日期:2000-12-31 发布日期:2000-12-31

The Influence of Heat Treatment Mode on the Properties of Bi4Ti3O12 Thin Films by Chemical Solution Deposition Technique

XIAO Zhuo-Bing, CHEN Shang, YAO Jun, WU Zhu-Qing, WU Xian-Ming   

  1. Department of Chemistry, Jishou University, Jishou, Hunan
  • Online:2000-12-31 Published:2000-12-31

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摘要：

Bi4Ti3O12 thin films were prepared by chemical solution deposition technique on n-Si(lOO). Bismuth nitrate and titanium butoxide were used as starting materials. In this paper, we used this technique to prepare Bi4Ti3O12 thin films heat treated by both rapid annealing for 30 seconds in a rapid annealing heater and annealing in a furnace for 30 minutes, and found that the heat treat mode greatly influences the properties of the films. The crystallization temperature of the film made from rapid annealing is about 500℃, while that of the film prepared by heating in a furnace is about 550℃. X-ray diffraction pattern of the film heat treated by the former has stronger (004), (006), (008), (0010) peaks than that of the film heat treated by the latter, which suggests that the rapid annealing heat treat mode favors preferential c-oriental film. The grain size of the film obtained by rapid annealing is smaller than that of the film prepared by heating in a furnace. When the films were both annealed at 600℃,the coercive field of the film heat treated by the former is 45 kV/cm, while that of the film heat treated by the latter is 87 kV/cm.

Abstract:

Bi4Ti3O12 thin films were prepared by chemical solution deposition technique on n-Si(lOO). Bismuth nitrate and titanium butoxide were used as starting materials. In this paper, we used this technique to prepare Bi4Ti3O12 thin films heat treated by both rapid annealing for 30 seconds in a rapid annealing heater and annealing in a furnace for 30 minutes, and found that the heat treat mode greatly influences the properties of the films. The crystallization temperature of the film made from rapid annealing is about 500℃, while that of the film prepared by heating in a furnace is about 550℃. X-ray diffraction pattern of the film heat treated by the former has stronger (004), (006), (008), (0010) peaks than that of the film heat treated by the latter, which suggests that the rapid annealing heat treat mode favors preferential c-oriental film. The grain size of the film obtained by rapid annealing is smaller than that of the film prepared by heating in a furnace. When the films were both annealed at 600℃,the coercive field of the film heat treated by the former is 45 kV/cm, while that of the film heat treated by the latter is 87 kV/cm.

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