高等学校化学学报 ›› 2000, Vol. 21 ›› Issue (S1): 204.
• Chemistry in Materials Sciences • 上一篇 下一篇
LIN Jun1, BAERNER K.2
LIN Jun1, BAERNER K.2
摘要:
Mn2+-doped Zn2SiO4 and Mg2Gd8(SiO4)6O2 phosphor films were deposited on silicon and quartz glass substrates by sol-gel process (dip-coating). The results of XRD and IR showed that the Zn2SiO4:Mn films remained amorphous below 700℃ and crystallized completely around 1000℃ From AFM studies, it was observed that the grains with 0.5-0.8 μm size packed closely in Zn2SiO4:Mn films, which were uniform and crack free. The luminescence properties of Zn2SiO4:Mn films were characterized by absorption, excitation and emission spectra as well as luminescence decay. These properties were, discussed in detail by a comparison with those of Mn2+ (and Pb2+)-doped Mg2Gd8(SiO4)6O2 phosphor films.
TrendMD: